Disclosed herein is a resin package substrate processing method for processing a resin package substrate including a mold resin in which a filler is mixed. The resin package substrate processing method includes a fixing step of fixing the resin package substrate through an adhesive tape to an annular frame, a dividing step of applying a laser beam having an absorption wavelength to the mold resin of the resin package substrate, to the mold resin to thereby form a plurality of division grooves dividing the resin package substrate into a plurality of package device chips, an interchip distance increasing step of expanding the adhesive tape to thereby increase the distance between any adjacent ones of the plural package device chips of the resin package substrate, and a cleaning step of supplying a cleaning liquid to the resin package substrate to thereby remove the filler caught between the adjacent package device chips.

A cleaning system and method use an ultrasound probe, a coupling mechanism, and a controller to clean equipment of a vehicle system. The ultrasound probe enters into an engine. The ultrasound probe emits ultrasound pulses and the coupling mechanism provides an ultrasound coupling medium between the ultrasound probe and one or more components of the engine. The controller drives the ultrasound probe to deliver the ultrasound pulse through the coupling medium to a surface of the one or more components of the engine. The ultrasound probe delivers the ultrasound pulse to remove deposits from the one or more components of the engine.

Representative implementations of devices and techniques provide a device and a technique for processing integrated circuit (IC) dies. The device comprises a die tray (such as a pick and place tray, for example) for holding the dies during processing. The die tray may include an array of pockets sized to hold individual dies. The technique can include loading dies on the die tray, cleaning the top and bottom surfaces of the dies, and ashing and activating both surfaces of the dies while on the die tray, eliminating the need to turn the dies over during processing.

A mask-integrated surface protective film, containing: a substrate film, and a mask material layer provided on the substrate film;
wherein the mask material layer is an ethylene-vinyl acetate copolymer resin, an ethylene-methyl acrylate copolymer resin, or an ethylene-butyl acrylate copolymer resin; and
wherein the thickness of the mask material layer is 50 m or less.

A method of cleaning an object that includes a plurality of chips divided individually, starting from modified layers, and integral with a holding member, includes the steps of placing the object in a cleaning tank filled with a cleaning liquid which contains a surface active agent, and cleaning away modified layer debris on side faces of the chips with ultrasonic waves generated by ultrasonic oscillating means.

Disclosed herein is a device wafer processing method including a protective film forming step of applying a water-soluble protective film material to the front side of a device wafer having devices separated by division lines and next exposing the division lines to form a protective film for protecting each device, an application time recording step of recording the time at which the water-soluble protective film material is applied to the device wafer, a determining step of determining whether or not a predetermined duration has elapsed from the time recorded in the application time recording step, an etching step of dry-etching the device wafer along the division lines after performing the determining step, and a protective film removing step of supplying a cleaning water to the protective film to thereby remove the protective film after performing the etching step. Only when it is determined in the determining step that the predetermined duration has not elapsed, the etching step is performed.

An acoustic foreign matter removal device includes a stage, an acoustic head, and a movement mechanism. The acoustic head has a plurality of ultrasonic speakers and a casing22. A plurality of ultrasonic waves generated from the plurality of ultrasonic speakers are concentrated in a gap between the casing and a holding surface of the stage to form a low pressure region; and foreign matter adhering to a surface of an electronic component is sucked into the low pressure region to remove the foreign matter from the surface.

A wafer cleaning apparatus of the present invention includes a vacuum chuck unit on which a wafer is mounted, a ring cover unit facing a retainer ring portion of the wafer, an expander module installed to move the ring cover unit and configured to press the retainer ring portion toward the vacuum chuck unit such that a gap between dies of the wafer widens, and a chucking module installed in the vacuum chuck unit to restrain the ring cover unit pressed by the expander module to the vacuum chuck unit.

Defluorination processes for removing fluorine residuals from a workpiece such as a semiconductor wafer are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer. The workpiece can have one or more fluorine residuals on a surface of the workpiece. The method can include performing a defluorination process on the workpiece at least in part using a plasma generated from a first process gas. The first process gas can include a hydrogen gas. Subsequent to performing the defluorination process, the method can include performing a plasma strip process on the workpiece to at least partially remove a photoresist layer from the workpiece.

According to one aspect of the present invention, a method of manufacturing a semiconductor device is provided, which includes a bonding step bonding a semiconductor substrate having a semiconductor element disposed on a first surface, to a support substrate, at least through an adhesive layer between the semiconductor substrate and the support substrate, and a groove forming step forming a groove in a scribe area of the semiconductor substrate, from a side of a second surface of the semiconductor substrate, the second surface being opposite to the first surface, and in the groove forming step, a conductive layer between the semiconductor substrate and the support substrate is exposed at a bottom of the groove, without the adhesive layer being exposed in the groove.