A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

A substrate processing method is provided. In the method, a substrate is provided. A monomer that is chemically bonded to the substrate is supplied onto the substrate. An initiator for polymerizing the monomer is supplied to the substrate having the supplied monomer thereon, thereby forming a polymer film.

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:

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A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between -20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.

An apparatus for treating a substrate includes a housing having a treatment space inside, a gas supply unit that supplies a hydrophobic gas into the treatment space to hydrophobicize the substrate, and a support unit that supports the substrate in the treatment space. The support unit includes a support plate, a heating member that heats the substrate placed on the support plate, and a height adjustment member that changes a position of the substrate between a first position spaced apart upward from an upper surface of the support plate by a first distance and a second position spaced apart upward from the upper surface of the support plate by a second distance, and the second position is a higher position than the first position.

The present invention provides an imprint method of performing a forming process which includes supplying an imprint material on a substrate and then forming a pattern of the imprint material on the substrate by using a mold, the method comprising: dispensing, on the substrate, an adhesion material to bring the substrate and the imprint material into tight contact with each other; performing a first annealing process of heating and cooling the substrate on which the adhesion material has been dispensed; conveying the substrate to which the first annealing process has been performed; performing a second annealing process of heating and cooling the substrate which has been conveyed in the conveying; and performing the forming process on the substrate to which the second annealing process has been performed.

A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

The present application relates to a method for preparing a patterned substrate. The method may be applied to a process of manufacturing devices such as, for example, electronic devices and integrated circuits, or other applications, such as manufacture of integrated optical systems, guidance and detection patterns of magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads or organic light emitting diodes, and the like, and may also be used to build a pattern on a surface used in manufacture of discrete track media, such as integrated circuits, bit-patterned media and/or magnetic storage devices such as hard drives.

Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X.sup.1 represents —N(R.sup.1)—; X.sup.2 represents —N(R.sup.2)—; X.sup.3 represents —CH(R.sup.3)—; X.sup.4 represents —CH(R.sup.4)— etc.; R.sup.1, R.sup.2, R.sup.3, and R.sup.4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R.sup.5, R.sup.6, R.sup.9, and R.sup.10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R.sup.7 and R.sup.8 represent benzene rings or naphthalene rings; and n and o are 0 or 1). A semiconductor device is manufactured by: coating the composition on a semiconductor substrate, firing the coated composition, and forming a resist underlayer film; forming a resist film thereon with an inorganic resist underlayer film interposed therebetween selectively as desired; forming a resist pattern by irradiating light or electron radiation and developing; etching the underlayer film using the resist pattern; and processing the semiconductor substrate using the patterned underlayer film.

An imprinting method includes dispensing a first liquid on a first region of a substrate. The first liquid is a photocurable resist precursor. A second liquid is dispensed on a second region of the substrate. The second region is adjacent to and surrounding the first region. The second liquid is non-photocurable as dispensed. The first region is then irradiated with light while a patterned template is being pressed against the first liquid. The light cures the first liquid and forms a resist pattern corresponding to the patterned template. The patterned template and the substrate are then separated from each other. The second liquid is then selectively removed from the substrate while leaving the resist pattern on the substrate.