A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.

Provided are a photocurable composition for imprints, having good releasability and temporal stability of the releasability, a pattern forming method, and a method for manufacturing a device.

This photocurable composition for imprints includes a monofunctional chained aliphatic (meth)acrylate (A1) not containing a fluorine atom, a bifunctional or higher polyfunctional (meth)acrylate (A2) not containing a fluorine atom, a monofunctional (meth)acrylate (B) containing a fluorine atom, and a photopolymerization initiator (C), in which the monofunctional chained aliphatic (meth)acrylate (A1) not containing a fluorine atom has a boiling point of 100° C. to 200° C. at a pressure of 0.67 kPa, and the monofunctional (meth)acrylate (B) containing a fluorine atom has a boiling point of 100° C. to 200° C. at a pressure of 0.67 kPa.

A positive photosensitive resin composition according to the present invention contains at least (A) a polysiloxane compound having at least a structural unit of the general formula (1), (B) a photoacid generator or quinone diazide compound and (C) a solvent
[(R.sup.X).sub.bR.sup.1.sub.mSiO.sub.n/2]  (1)
where R.sup.X represents the following group; R.sup.1 each represents a hydrogen atom, C.sub.1-C.sub.3 alkyl group, phenyl group, hydroxy group, C.sub.1-C.sub.3 alkoxy group or C.sub.1-C.sub.3 fluoroalkyl group; b represents an integer of 1 to 3; m represents an integer of 0 to 2; n represents an integer of 1 to 3; and b, m and n satisfy b+m+n=4, ##STR00001##
where X each represents a hydrogen atom or acid labile group; and a represents an integer of 1 to 5. It is possible by the use of this positive photosensitive resin composition to provide a film with high resistance and heat-resistant transparency and provide an electronic component with such a film.

Methodologies for patterning and implantation are provided Embodiments include forming fins; forming an SiN over the fins; forming an a-Si layer over the SiN; forming and patterning a first patterning layer over the a-Si layer; etching through the a-Si layer using the first patterning layer as a mask; removing the first patterning layer; implanting ions in exposed groups of fins; forming and patterning a second patterning layer to expose a first group of fins and a portion of the a-Si layer on opposite sides of the first group of fins; implanting ions in a first region of the first group of fins; forming a third patterning layer over the first region of the first group of fins and exposing a second region of the first group of fins; and implanting ions in the second region of the first group of fins.

A high-temperature-stable spin-on-carbon (“SOC”) material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SC1 resistant, especially on TiN and SiOx surfaces.

There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.

There is provided an imprint apparatus for forming a pattern of an imprint material on a substrate by using a mold, the imprint apparatus including a mold holding unit configured to hold the mold, and a substrate holding unit configured to hold the substrate, in which a particle is captured by generating a first region and a second region charged to different polarities in at least either one of a peripheral region of a region covered by the mold of the mold holding unit and a peripheral region of a region covered by the substrate of the substrate holding unit.

The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.

A substrate processing apparatus includes a development processor and a reversal film former, and processes a substrate having one surface on which a resist film made of a photosensitive material is formed. The development processor forms a resist pattern on the one surface of the substrate by performing development processing on a resist film using a development liquid. A reversal film former forms a reversal film having etch resistance higher than that of the resist film on the one surface of the substrate to cover the resist pattern while regulating a temperature of the substrate in a certain range after the development processing is performed by the development processor.

There is provided a method of processing a substrate using a block copolymer composed of a first polymer containing an oxygen atom and a second polymer containing no oxygen atom, the method including: coating the block copolymer onto the substrate on which a predetermined pattern is formed; phase-separating the block copolymer into the first polymer and the second polymer; and heating the substrate in a low oxygen atmosphere to selectively remove the first polymer from the phase-separated block copolymer.