Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

There is provided an insertion/extraction mechanism for having one or multiple block members being inserted into or extracted from a frame member forming an intermediate connection member that is disposed between a first member having multiple first members and a second member having multiple second terminals and electrically connects the first terminals and the second terminals, the block member having multiple connection terminals for electrically connecting the first terminals and the second terminals. The insertion/extraction mechanism comprises a first engaging unit and a second engaging unit that are engaged with a first engaged portion and a second engaged portion of the block member, respectively, thereby holding the block member.

The present disclosure relates to a wafer processing apparatus and a wafer transfer method. The wafer processing apparatus includes: a first machine; a second machine, including a manipulator, the manipulator transfers a wafer to the machine through a connection port; the connection port is provided between the first machine and the second machine; door panels, provided on the first machine and used to close the connection port; a detector, for detecting a current position of the door panel; a driver, connected to the door panel, for driving the door panel to move to open or close the connection port; and a controller, connected to the detector, the driver and the manipulator, for controlling the door panel to move according to the current position of the door panel to open or close the connection port, and control the manipulator to transfer the wafer.

A substrate processing system includes substrate processing apparatuses and a group management device. The substrate processing apparatuses each include a plan creating section. The plan creating section creates a plan indicating a timing when a processing liquid is used and a flow rate of the processing liquid. The processing liquid is supplied to the substrate processing apparatuses from a single resource system. The group management device includes a processing section. The processing section determines whether the total flow rate of the processing liquid to be used by the substrate processing apparatuses exceeds a threshold value based on the plans created by the substrate processing apparatuses. When determining that the total flow rate exceeds the threshold value, the processing section instructs one of the substrate processing apparatuses to adjust the plan thereof.

An apparatus and a method for non-destructive inspection of quality of an electrostatic chuck are disclosed. The apparatus includes a measurement unit for measuring a first capacitance of a dielectric layer of the electrostatic chuck and for measuring a second capacitance of an electrode installed in the dielectric layer; and a control unit configured to evaluate quality of the electrode, based on the first capacitance and the second capacitance.

The present disclosure generally provides for a system and method for measuring one or more characteristics of one or more substrates in a multi-station processing system using one or more metrology modules at a plurality of metrology stations. In one embodiment, a system controller is configured to cause the multi-station processing system to perform a method that includes processing a plurality of substrates at a plurality of processing stations, advancing one or more of the plurality of substrates to a respective metrology station, measuring one or more characteristics of the plurality of substrates at the respective metrology station, determining a processing performance metric based on the one or more characteristics, comparing the processing performance metric to a tolerance limit to determine if an out of tolerance condition has occurred, and adjusting one or more processing parameters when it is determined that an out of tolerance condition has occurred.

A method for forming a capacitor via includes: providing a to-be-processed wafer, the to-be-processed wafer including a substrate and a first dielectric layer and a first mask layer that are sequentially formed on a surface of the substrate; etching the first mask layer according to a compensated first etching parameter, to form a first patterned layer extending in a first etching direction; sequentially forming a second dielectric layer and a second mask layer on a surface of the first patterned layer; etching the second mask layer and the second dielectric layer according to a compensated second etching parameter, to form a second patterned layer extending in a second etching direction; and etching the first dielectric layer with the first patterned layer and the second patterned layer together as a capacitor pattern, to form a capacitor via.

An apparatus includes a substrate; circuit components disposed on the substrate; and a location identifier layer over the circuit, wherein the location identifier layer includes one or more section labels for representing physical locations of the circuit components within the apparatus.

An electronic device manufacturing system includes a transfer chamber, a tool station situated within the transfer chamber, a process chamber coupled to the transfer chamber, and a transfer chamber robot. The transfer chamber robot is configured to transfer substrates to and from the process chamber. The transfer chamber robot is further configured to be coupled to a sensor tool comprising one or more sensors configured to take measurements inside the process chamber. The sensor tool is retrievable from the tool station by an end effector of the transfer chamber robot.