An embodiment of the present application provides a semiconductor etching device, comprising: an air delivery chamber (21), configured to accommodate a wafer (22) to be etched; an air intake module (23), configured to feed air into the air delivery chamber (21); an air exhaust module, configured to exhaust air in the air delivery chamber (21), the air exhaust module comprising an airlock (27) and a wind speed measurement and control unit (28), the wind speed measurement and control unit (28) being configured to detect an air flow rate in the air delivery chamber (21) and adjust the degree of opening of the airlock (27) based on the air flow rate.

There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave component.

An apparatus for securing a substrate includes a detachable plate configured to reversibly attach to a base of a chuck. The base of the chuck includes one or more base-substrate vacuum inlet channels and one or more base-plate inlet channels. The detachable plate includes one or more first vacuum reservoirs and second vacuum reservoirs. The detachable plate is further configured to establish a fluidic connection between the one or more first vacuum reservoirs and the base-plate inlet channels for forming a first vacuum seal between the detachable plate and the base. The detachable plate further includes one or more pass-through channels for fluidic connection with the one or more second vacuum reservoirs for forming a second vacuum seal between the detachable plate and the substrate.

A vacuumizing device includes a vacuum chamber, a bonding fixture and a vacuumizing system. The bonding fixture is disposed in the vacuum chamber and includes a substrate table provided with a plurality of grooves for retention of the substrate by suction. The vacuumizing system is disposed in communication with both the vacuum chamber and grooves. During vacuumizing by the vacuumizing system, a vacuum value in the grooves is smaller than or equal to a vacuum value in the vacuum chamber. In the vacuumizing device and methods, the vacuumizing system is used to vacuumize the grooves in the substrate table and the vacuum chamber so that the vacuum value in the grooves is always smaller than or equal to that in the vacuum chamber. As a result, the substrates are firmly retained on the substrate table without warping, thereby improving the quality of substrate bonding.

A method for analyzing a semiconductor device includes repeatedly etching an entire surface of a wafer at a same etch rate by a target depth to expose a next surface of the wafer. The method includes obtaining two-dimensional structure information from each repeatedly etched surface of the wafer and serially stacking the repeatedly obtained two-dimensional structure information to generate a three-dimensional image.

A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

Contamination from outgassing during a deposition process is addressed by a series of equipment enhancements, including throttle valves, a dual air curtain, and a residual gas analysis (RGA) monitor. The dual air curtain can be configured to flow a first gas during wafer processing and a second gas during wafer unloading, to re-direct and capture outgassed species. The dual air curtain and the throttle valves can be programmed in an automated feedback control system that utilizes data from the RGA monitor.

An apparatus for controlling the temperature of a substrate is equipped with a plate-type main body having a substrate placement area, a first temperature-control device for controlling the temperature of the main body using a first temperature-control fluid, having a first plurality of separate annular channels inside the main body, a second temperature-control device for controlling the temperature of the main body using a second temperature-control fluid, having a second plurality of separate annular channels inside the main body, wherein the first temperature-control fluid is supplied to the first plurality of annular channels through a first tube and removed therefrom through a second tube, wherein the second temperature-control fluid is supplied to the second plurality of annular channels through a third tube and removed therefrom through a fourth tube, wherein the main body has a first to fourth hole that communicate with the first plurality of separate annular channels and the second plurality of separate annular channels, wherein the first to fourth tubes are placed in the first to fourth holes of the main body.

Provided is an apparatus for treating a substrate. The substrate treating apparatus may include: a substrate support unit supporting a substrate; a nozzle supplying a liquid to the substrate supported on the substrate support unit; a home port in which the nozzle waits; and an electrostatic measurement member measuring an electrostatic amount of a liquid dispensed from the nozzle in the home port.

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing fast throughput die handling for synchronous multi-die testing. For instance, there is disclosed in accordance with one embodiment a device handler for testing functional silicon devices, the device handler including: a plurality of test interface units to electrically interface to the functional silicon devices for test; a plurality of thermal actuators, each being individually movable upon at least three axes; an optical alignment unit with a plurality of pick and place head pairs, in which the optical alignment unit is to move upon a horizontal plane and is to move between the plurality of test interface units and the plurality of thermal actuators; an upward facing camera to move with the optical alignment unit, the upward facing camera to optically locate a position of the plurality of test interface units; a plurality of downward facing cameras, each to optically locate a position of one of the plurality of functional silicon devices to be tested upon one of the plurality of thermal actuators; in which the device handler is to move the optical alignment unit out from between the plurality of test interface units and the plurality of thermal actuators; and in which the device handler is to align test probes affixed to the test interface units with the plurality of functional silicon devices to be tested and electrically interface the test probes with the functional silicon devices for testing. Other related embodiments are disclosed.