The present disclosure provides a device for conveying and dispersing a silicon wafer (100). The device for conveying and dispersing a silicon wafer (100) includes: a conveying component (20) configured for conveying a plurality of silicon wafers (200); a clamping component (10) disposed at two sides of the conveying component (20), the clamping component (10) being capable of clamping and conveying the plurality of silicon wafers (200); and a spraying component (30) disposed on the clamping component (10), wherein after the plurality of silicon wafers (200) are conveyed to an end of the conveying component (20) proximal to the spraying component (30) via the conveying component (20) and the clamping component (10), the spraying component (30) is capable of spraying water on the plurality of silicon wafers (200) to separate adjacent two of the plurality of silicon wafers (200).

The present invention provides a wafer notch leveling device, which comprises a body, a first rotating portion, a positioning portion, a power portion, and a control unit. The body has a support portion and a pivot portion is provided at each terminal of the body, the pivot portion pivotally connects a plurality of supporting arms. The first rotating portion and the positioning portion are electrically connected with the power portion. The power portion is electrically connected with the control unit. Especially, when a plurality of wafers are placed on the support portion and fixed, the first rotating portion is electrically connected with the power portion through the control unit to drive the plurality of wafers to rotate the wafers, a notch on the wafer is leveled through the positioning portion.

A holding device for holding a plurality of substrates for plasma-enhanced deposition of a layer from the gas phase on the substrates, having: inner carrier plates, arranged parallel to one another and designed to carry substrates on mutually opposite sides; outer carrier plates, arranged parallel to the inner carrier plates and having an inner side facing the inner carrier plates, and an outer side facing away from the inner carrier plates, wherein each outer carrier plate is designed to carry one or more substrates on its inner side and to be free of substrates on its outer side; and shielding plates which are each arranged at a distance from the outer side of the outer carrier plate such that, as seen in a plan view of the outer carrier plates, the shielding plates at least predominantly shield the outer carrier plates, wherein each shielding plate is free of substrates.

A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate.

A substrate fixing device includes a first supporter supporting at least one substrate and a second supporter connected to the first supporter, making contact with a first surface and a second surface of the at least one substrate in a first direction, and vertically fixing the at least one substrate such that a third surface faces a normal line direction of the first supporter. The second supporter defines a deposition surface including the third surface, a portion of the first surface adjacent to the third surface, and a portion of the second surface adjacent to the third surface in the at least one substrate and exposes the defined deposition surface to the deposition processing space. A deposition processing equipment including the substrate fixing device and a deposition processing method using the deposition processing equipment are also provided.

The present invention provides a wafer notch leveling device, which comprises a body, a first rotating portion, a positioning portion, a power portion, and a control unit. The body has a support portion and a pivot portion is provided at each terminal of the body, the pivot portion pivotally connects a plurality of supporting arms. The first rotating portion and the positioning portion are electrically connected with the power portion. The power portion is electrically connected with the control unit. Especially, when a plurality of wafers are placed on the support portion and fixed, the first rotating portion is electrically connected with the power portion through the control unit to drive the plurality of wafers to rotate the wafers, a notch on the wafer is leveled through the positioning portion.

A plasma boat for receiving wafers with partial damping of the plasma deposition comprises a number of boat plates spaced apart in parallel, which are provided with wafer holders for receiving upright wafers, in order to securely hold the wafers during transport and during the depositing process in a coating chamber, and wherein the boat plates are mechanically connected to one another by electrically insulating spacers. This provides a plasma boat, with regulated plasma deposition, which ensures a deposition on wafers that is uniform over the surface area thereof and has a constant layer thickness. This is achieved by a damping element (12) being respectively arranged between the wafer holders (16) located parallel to one another, between adjacent boat plates (15), and electrically insulated with respect to the latter on spacer elements (2).

Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit includes a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

The present disclosure provides a method for producing a boron nitride nanotube by heating a boron precursor, and an apparatus therefor. According to an embodiment, a method of producing a boron nitride nanotube includes: inserting several reaction modules each accommodating a holding rod disposed through at least one precursor block into a supply chamber disposed at a front end of a reaction chamber; conveying N reaction modules of the several reaction modules inserted in the supply chamber to a reaction zone of the reaction chamber; growing a boron nitride nanotube in the precursor block by operating the reaction zone for a predetermined time, in the reaction chamber; and conveying the N reaction modules from the reaction chamber to a discharge chamber disposed at a rear end of the reaction chamber after the predetermined time passes. Accordingly, it is possible to maximize the yield and productivity of BNNTs.