A display method includes storing, in a storage unit, first history information in which a processing is executed by a substrate processing apparatus based on a recipe; storing, in the storage unit, second history information in which an execution instruction for a job is received to instruct execution of the processing; and calculating, based on the first history information and the second history information, a first idle time indicating a time during which the processing is not performed and a second idle time indicating a time from an end of the job to a start of execution of a next job, and displaying the first idle time and the second idle time.

A method includes: generating a contaminant distribution map by sampling an environment of a cleanroom; selecting a first fabrication tool of the cleanroom by comparing the contaminant distribution map with at least one diffusion image in a first database; comparing parameters of the first fabrication tool against process utility information in a second database; and when the parameters are consistent with the process utility information, taking at least one action. The one action may include moving a cleaning tool to a location associated with a contaminant concentration of the contaminant distribution map; turning on a fan of the cleaning tool; stopping pod transit to the first fabrication tool; or halting production by the first fabrication tool.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber; a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber; and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

Provided is a susceptor, capable of preventing occurrence of scratches on the back surface of a wafer attributable to lift pins, and reducing unevenness of the in-surface temperature distribution of the wafer. A susceptor according to one embodiment of this disclosure has a susceptor main body and a plate-shaped member, and when a wafer is conveyed, the front surface of the plate-shaped member ascended by lift pins supports the central part of the back surface of the wafer by surface contact. A separation space between the plate-shaped member and the susceptor main body, in a state in which the plate-shaped member is placed on the recessed part, enters further into the central side of the plate-shaped member, in a direction from the front surface to the back surface of the susceptor.

The present invention relates to an etching device comprising: an etching chamber; an opening/closing unit for opening/closing the etching chamber; and a locking unit for selectively locking the opening/closing unit.

The present invention relates to an etching device using an etching chamber, comprising: an etchant storage chamber in which an etchant is stored; a connection unit communicating with the etching liquid storage chamber; an etching chamber which is connected with the etching liquid storage chamber through the connection unit, and in which an object is etched; and a pressurization maintaining unit for maintaining the etching liquid storage chamber and/or the etching chamber in a pressurized atmosphere.

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

There is provided a configuration that includes: at least one transfer mechanism configured to transfer a substrate and at least one processing mechanism configured to process the substrate; an earthquake detector configured to detect an earthquake; and a controller configured to control the at least one transfer mechanism and the at least one processing mechanism according to a detection result of the earthquake detector, wherein the controller is configured to be capable of performing a stopping operation of the at least one transfer mechanism according to a P wave (initial tremor wave) and an S wave (principal fluctuation wave).

A semiconductor processing apparatus according to the present invention includes a main body cover that covers a main body device and a control device. The main body cover has a transfer opening for transferring a semiconductor, and the main body cover further has an intake port that generates an air flow in a horizontal direction inside the main body cover.