A semiconductor structure is provided. The semiconductor structure includes two circuit regions, two inner seal rings, an outer seal ring, a first redundant region, and an electrical circuit. Each of the inner seal rings surrounding one of the circuit regions. The outer seal ring is disposed around the inner seal rings, and each of the inner seal rings contacts the outer seal ring at different interior corners of the outer seal ring. The first redundant region is located between at least one of the inner seal rings and the outer seal ring. The electrical circuit is formed in the first redundant region and electrically connected to at least one of the circuit regions.

Described is an apparatus which comprises: a first die including: a processing core; a crossbar switch coupled to the processing core; and a first edge interface coupled to the crossbar switch; and a second die including: a first edge interface positioned at a periphery of the second die and coupled to the first edge interface of the first die, wherein the first edge interface of the first die and the first edge interface of the second die are positioned across each other; a clock synchronization circuit coupled to the second edge interface; and a memory interface coupled to the clock synchronization circuit.

Described is an apparatus which comprises: a first die including: a processing core; a crossbar switch coupled to the processing core; and a first edge interface coupled to the crossbar switch; and a second die including: a first edge interface positioned at a periphery of the second die and coupled to the first edge interface of the first die, wherein the first edge interface of the first die and the first edge interface of the second die are positioned across each other; a clock synchronization circuit coupled to the second edge interface; and a memory interface coupled to the clock synchronization circuit.

A semiconductor package test system includes a test pack on which a semiconductor package is loaded, and a semiconductor package testing apparatus. The semiconductor package testing apparatus includes a receiving section that receives the test pack. The receiving section includes a pack receiving slot into which the test pack is inserted. The test pack includes a chuck on which the semiconductor package is fixed, a probe block disposed above the chuck, and a connection terminal. The receiving section includes a receiving terminal that is electrically connected to the connection terminal when the receiving terminal contacts the connection terminal. The probe block includes at least one needle configured to be electrically connected to the semiconductor package disposed on the chuck upon the chuck moving toward the semiconductor package. The receiving section is provided in plural.

A semiconductor package test system includes a test pack on which a semiconductor package is loaded, and a semiconductor package testing apparatus. The semiconductor package testing apparatus includes a receiving section that receives the test pack. The receiving section includes a pack receiving slot into which the test pack is inserted. The test pack includes a chuck on which the semiconductor package is fixed, a probe block disposed above the chuck, and a connection terminal. The receiving section includes a receiving terminal that is electrically connected to the connection terminal when the receiving terminal contacts the connection terminal. The probe block includes at least one needle configured to be electrically connected to the semiconductor package disposed on the chuck upon the chuck moving toward the semiconductor package. The receiving section is provided in plural.

A semiconductor memory device includes a first and second substrates; and a first and second element layers respectively provided on an upper surface of the first and the second substrates. The first and second substrates respectively include a first and second vias. The first and second element layers respectively includes a first and second pads respectively electrically coupled to the first and second vias, and respectively provided on an upper surface of the first and second element layers. The upper surface of the second element layer is arranged so as to be opposed to the upper surface of the first element layer. The first and second pads are electrically coupled and symmetrically arranged with respect to a surface where the first and second element layers are opposed to each other.

A semiconductor memory device includes a first and second substrates; and a first and second element layers respectively provided on an upper surface of the first and the second substrates. The first and second substrates respectively include a first and second vias. The first and second element layers respectively includes a first and second pads respectively electrically coupled to the first and second vias, and respectively provided on an upper surface of the first and second element layers. The upper surface of the second element layer is arranged so as to be opposed to the upper surface of the first element layer. The first and second pads are electrically coupled and symmetrically arranged with respect to a surface where the first and second element layers are opposed to each other.

A protective sheeting for use in processing a semiconductor-sized wafer has a substantially circular base sheet and a substantially annular adhesive layer applied to a peripheral portion of a first surface of the base sheet. The inner diameter of the adhesive layer is smaller than the diameter of the wafer. Further, the outer diameter of the adhesive layer is larger than the inner diameter of an annular frame for holding the wafer. A related method includes attaching the protective sheeting to a front side or a back side of the wafer via the adhesive layer on the first surface of the base sheet so that an inner peripheral portion of the adhesive layer adheres to an outer peripheral portion of the front side or the back side of the wafer, and processing the wafer after the protective sheeting has been attached to the front side or the back side thereof.

A protective sheeting for use in processing a semiconductor-sized wafer has a substantially circular base sheet and a substantially annular adhesive layer applied to a peripheral portion of a first surface of the base sheet. The inner diameter of the adhesive layer is smaller than the diameter of the wafer. Further, the outer diameter of the adhesive layer is larger than the inner diameter of an annular frame for holding the wafer. A related method includes attaching the protective sheeting to a front side or a back side of the wafer via the adhesive layer on the first surface of the base sheet so that an inner peripheral portion of the adhesive layer adheres to an outer peripheral portion of the front side or the back side of the wafer, and processing the wafer after the protective sheeting has been attached to the front side or the back side thereof.

Electronic devices are manufactured using a collective (wafer-scale) fabrication process. Electronic chips are mounted onto one face of a collective substrate wafer. A collective flexible sheet made of a heat-conductive material comprising a layer containing pyrolytic graphite is fixed to extend over a collective region extending over the electronic chips and over the collective substrate wafer between the electronic chips. The collective flexible sheet is then compressed. A dicing operation is then carried out in order to obtain electronic devices each including an electronic chip, a portion of the collective plate and a portion of the collective flexible sheet.