A method for manufacturing an electronic component is provided where resin adhesive rarely spreads before curing. The method includes providing a first sealing member and forming a frame-shaped glass layer on a principal surface of the first sealing member. Moreover, the first sealing member is cut into multiple first sealing members and second sealing members are bonded with resin adhesive to inner frame regions on the principal surface of the first sealing member defined by the glass layer.

A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A frame lid for use with a semiconductor package is disclosed. First, a mask is applied to a top surface of the lid and over a central area of the top surface to define a peripheral area. Next, a seal ring is formed by metallizing the peripheral area and the sidewall of the plate. The mask can then be removed obtain the frame lid. Next, a solder preform can be attached to the seal ring. This reduces pullback and shrinkage of the metallized layer, while lowering the manufacturing cost and process times.

A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

A package that hermetically seals an integrated circuit includes a metal lid (7) and a metal housing (10) having an open upper portion (12). In the package, the housing (10) includes in a wall surface thereof a glass unit (2) that seals a plurality of lead terminals therein. The glass unit (2) is disposed in a wall surface of the housing (10) such that a thickness in a vertical direction of the wall surface on an upper side of the glass unit (2) is determined according to a threshold limit value of a difference in temperature between glass that forms the glass unit (2) and metal that forms the wall surface.

A package that hermetically seals an integrated circuit includes a metal lid (7) and a metal housing (10) having an open upper portion (12). In the package, the housing (10) includes in a wall surface thereof a glass unit (2) that seals a plurality of lead terminals therein. The glass unit (2) is disposed in a wall surface of the housing (10) such that a thickness in a vertical direction of the wall surface on an upper side of the glass unit (2) is determined according to a threshold limit value of a difference in temperature between glass that forms the glass unit (2) and metal that forms the wall surface.

A packaged electronic system comprises a slab (210) of low-grade silicon (l-g-Si) configured as ridges (114) framing a depression of depth (112) including a recessed central area suitable to accommodate semiconductor chips and embedded electrical components, the depth at least equal to the thickness of the chips and the components, the ridge covered by system terminals (209b) connected to attachment pads in the central area; and semiconductor chips (120, 130) having a thickness and terminals on at least one of opposing chip sides, the chips terminals attached to the central area terminals so that the opposite chip side is coplanar with the system terminals on the slab ridge.

A SAW device includes a SAW element, a conductor connected to the SAW element, an LT substrate including the SAW element, and a case for housing the LT substrate including the SAW element. The case includes a cover part, a lateral part, and a bottom part. The bottom part is including a sapphire substrate, the LT substrate is positioned on a first surface of the sapphire substrate, the first surface serving as an inner surface of the case, and a second surface opposite to the first surface serves as an outer surface of the case. The conductor includes a via conductor provided in a through-hole continuously penetrating through the sapphire substrate and the LT substrate.

The present invention provides a hermetic package, including a ceramic base and a glass cover hermetically integrated with each other via a sealing material layer, wherein the ceramic base includes 0.1 mass % to 10 mass % of a black pigment, and wherein a difference between: a light absorption rate of the ceramic base at a wavelength of 808 nm when converted to 0.5 mm; and a light absorption rate of the sealing material layer at a wavelength of 808 nm when converted to 0.005 mm is 30% or less.