Representative techniques and devices, including process steps may be employed to mitigate undesired dishing in conductive interconnect structures and erosion of dielectric bonding surfaces. For example, an embedded layer may be added to the dished or eroded surface to eliminate unwanted dishing or voids and to form a planar bonding surface. Additional techniques and devices, including process steps may be employed to form desired openings in conductive interconnect structures, where the openings can have a predetermined or desired volume relative to the volume of conductive material of the interconnect structures. Each of these techniques, devices, and processes can provide for the use of larger diameter, larger volume, or mixed-sized conductive interconnect structures at the bonding surface of bonded dies and wafers.

In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.

An electronic component cap for producing a package having a sealed region by being bonded to a base, having a brazing material-fused surface to which a brazing material is fused and a sealing surface corresponding to the sealed region. The brazing material-fused surface has a non-flat work surface formed by plastic working, and a ratio (Sc/Sf) of a surface area (Sc) of the brazing material-fused surface per unit area to a surface area (Sf) of the sealing surface per unit area satisfies 1<Sc/Sf1.6. The cross-sectional shape of the work surface may be one of various shapes such as a groove shape, an approximately V shape, and a circular-arc shape. The cap has a good wettability when a brazing material is fused. Also, the brazing material does not wet-spread excessively when the brazing material is melted again for sealing work.

A semiconductor package includes an extendible molding member, a chip embedded in the molding member to have a warped shape, and connectors disposed in the molding member. First surfaces of the connectors are exposed at a surface of the molding member, and second surfaces of the connectors are coupled to the chip.

A semiconductor device includes a bottom die including a first semiconductor layer, and a first redistribution layer (RDL) disposed on a bottom surface of the first semiconductor layer; a top die disposed on a top surface of the first semiconductor layer and including a second semiconductor layer, and a second RDL disposed on the top surface of the first semiconductor layer; a stress control (SC) layer disposed on the top surface of the first semiconductor layer and side surfaces of the first die; and a dielectric layer disposed on the SC layer, wherein the SC layer is configured to apply a compressive stress of at least 100 MPa to the top surface of the first semiconductor layer, or the SC layer is configured to apply a tensile stress of at least 100 MPa to the top surface of the first semiconductor layer.

A semiconductor package includes an extendible molding member, a chip embedded in the molding member to have a warped shape, and connectors disposed in the molding member. First surfaces of the connectors are exposed at a surface of the molding member, and second surfaces of the connectors are coupled to the chip.

A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer.

A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer.

Disclosed is a semiconductor device that is configured to contain a sealing layer for sealing a semiconductor element supported on a base, the sealing layer being configured to have a nanocomposite structure that comprises a large number of nanometer-sized (1 m or smaller) insulating nanoparticles composed of SiO.sub.2, and an amorphous silica matrix that fills up the space around the insulating nanoparticles without voids and gaps.

It is an object of the present invention to achieve reduced faults in manufacturing steps and increased reliability by relieving electric field strength of a surface of a power semiconductor chip. The present invention includes: a power semiconductor chip disposed on an insulating substrate; wiring connected to a surface conductor pattern in an element region of the power semiconductor chip; a low dielectric constant film disposed between the wiring and the peripheral region; and a sealing material formed so as to cover the insulating substrate, the power semiconductor chip, the wiring, and the low dielectric constant film. The low dielectric constant film has a dielectric constant lower than that of the sealing material.