A semiconductor package includes a semiconductor die including circuitry electrically coupled to bond pads that is mounted onto a leadframe. The leadframe includes a plurality of leads and a dam bar having a transverse portion that extends between adjoining ones of the leads. The bond pads are electrically connected to the plurality of leads. A raised dam pattern is on the dam bar or on an edge of an exposed portion of a top side clip of the semiconductor package that is positioned above and connects to the semiconductor die. The raised dam pattern includes a first material that is different relative to the material of the dam bar or the clip. A mold material encapsulates the semiconductor die.

A semiconductor device includes a semiconductor element, a base plate, and a plurality of contact materials. The base plate has a front surface holding the semiconductor element and a rear surface to which a cooling body to cool the semiconductor element is attachable. The plurality of contact materials are discretely arranged on the rear surface of the base plate. The plurality of contact materials are materials for bridging a gap on a heat dissipation path between the base plate and the cooling body. The plurality of contact materials each have a volume based on a bowed shape of the rear surface of the base plate. From among the plurality of contact materials, a contact material at a concave of the bowed shape has a greater volume than a contact material at a convex of the bowed shape.

A semiconductor device includes: a first chip including first and second electrodes provided at a first surface, and a third electrode provided at a second surface positioned at a side opposite to the first surface; a second chip including fourth and fifth electrodes provided at a third surface, and a sixth electrode provided at a fourth surface positioned at a side opposite to the third surface, wherein the second chip is disposed to cause the third surface to face the first surface; a first connector disposed between the first electrode and the fourth electrode and connected to the first and fourth electrodes; and a second connector disposed between the second electrode and the fifth electrode and connected to the second and fifth electrodes.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.

A method of making a packaged integrated circuit device includes forming a lead frame with leads that have an inner portion and an outer portion, the inner portion of the lead is between a periphery of a die pad and extends to one end of openings around the die pad. The outer portion of the leads are separated along their length almost up to an opposite end of the openings. Leads in a first subset of the leads alternate with leads in a second subset of the leads. The inner portion of the first subset of the leads is bent. The die pad, the inner portion of the leads, and only a first portion of the openings adjacent the inner portion of the leads are encapsulated. A second portion of the openings and the output portions of the leads form a dam bar for the encapsulating material.

A semiconductor device includes a semiconductor chip made of a SiC substrate and having main electrodes on one surface and a rear surface, first and second heat sinks, respectively, disposed adjacent to the one surface and the rear surface, a terminal member interposed between the second heat sink and the semiconductor chip, and a plurality of bonding members disposed between the main electrodes, the first and second heat sinks, and the terminal member. The terminal member includes plural types of metal layers symmetrically layered in the plate thickness direction. The terminal member as a whole has a coefficient of linear expansion at least in a direction orthogonal to the plate thickness direction in a range larger than that of the semiconductor chip and smaller than that of the second heat sink.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A semiconductor package includes an insulating layer including a first face and a second face opposite each other, a redistribution pattern including a wiring region and a via region in the insulating layer, the wiring region being on the via region, and a first semiconductor chip connected to the redistribution pattern. The first semiconductor chip may be on the redistribution pattern. An upper face of the wiring region may be coplanar with the first face of the insulating layer.

A semiconductor device A1 disclosed includes: a semiconductor element 10 having an element obverse face and element reverse face that face oppositely in a thickness direction z, with an obverse-face electrode 11 (first electrode 111) and a reverse-face electrode 12 respectively formed on the element obverse face and the element reverse face; a conductive member 22A opposing the element reverse face and conductively bonded to the reverse-face electrode 12; a conductive member 22B spaced apart from the conductive member 22A and electrically connected to the obverse-face electrode 11; and a lead member 51 having a lead obverse face 51a facing in the same direction as the element obverse face and connecting the obverse-face electrode 11 and the conductive member 22B. The lead member 51, bonded to the obverse-face electrode 11 via a lead bonding layer 321, includes a protrusion 521 protruding in the thickness direction z from the lead obverse face 51a. The protrusion 521 overlaps with the obverse-face electrode 11 as viewed in the thickness direction z. This configuration suppresses deformation of the connecting member to be pressed during sintering treatment.