A semiconductor package includes a first substrate including a first recess formed in a top surface of the first substrate, a first semiconductor chip disposed in the first recess and mounted on the first substrate, an interposer substrate disposed on the first semiconductor chip and including a second recess formed in a bottom surface of the interposer substrate, an adhesive layer disposed in the second recess and in contact with a top surface of the first semiconductor chip, a plurality of connection terminals spaced apart from the first recess and connecting the first substrate to the interposer substrate, and a molding layer disposed between the first substrate and the interposer substrate.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of aluminum-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, at a bonded interface between the copper member and the ceramic member, an active metal compound layer containing an active metal compound that is a compound of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and in the active metal compound layer Al and Cu are present at a grain boundary of the active metal compound.

Liquid metal thermal interface materials and their uses in electronics assembly are described. In one implementation, a semiconductor assembly includes: a semiconductor die; a heat exchanger; and a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without using a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger. The TIM alloy may be formed by placing a TIM material between the semiconductor die and the heat exchanger, the TIM material comprising a first liquid metal foam in touching relation with the surface of the semiconductor die, a second liquid metal foam in touching relation with the surface of the heat exchanger.

A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.

According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm.sup.2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.

A semiconductor package structure having an antenna module includes: a substrate, having a first surface and a second surface; a semiconductor chip, disposed on the first surface; a plastic packaging material layer, formed on the first surface, where the plastic packaging material layer wraps the semiconductor chip and exposes a part of a front surface of the semiconductor chip; a rewiring layer, disposed on the plastic packaging material layer and electrically connected to the semiconductor chip; a metal bump, electrically connected to the rewiring layer; and an antenna module, disposed on the second surface of the substrate.

A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.

An integrated circuit assembly including a first die including a device side and a backside opposite the device side; and a second die including a plurality of fluidly accessible channels therein, wherein the second die is coupled to a backside of the first die. A method of fabricating an integrated circuit assembly including coupling a first die to a second die, wherein the first die includes a device side and an opposite backside, wherein the device side includes a plurality of integrated circuits and wherein the second die includes a plurality of fluidly accessible channels therein.

The disclosure provides a chip package and an electronic device. The chip package includes: a package substrate, a semiconductor substrate provided on the package substrate and a first chip and a second chip provided on the semiconductor substrate. The semiconductor substrate includes a first group of pins and a second group of pins arranged on the semiconductor substrate and a connecting layer located between the first group of pins and the second group of pins. The connecting layer has a plurality of connecting channels, and the first group of pins and the second group of pins are connected through the plurality of connecting channels. The first chip has a third group of pins, the second chip has a fourth group of pins, and the third group of pins are connected to the first group of pins, and the fourth group of pins are connected to the second group of pins.

The disclosure provides a chip package and an electronic device. The chip package includes: a package substrate, a semiconductor substrate provided on the package substrate and a first chip and a second chip provided on the semiconductor substrate. The semiconductor substrate includes a first group of pins and a second group of pins arranged on the semiconductor substrate and a connecting layer located between the first group of pins and the second group of pins. The connecting layer has a plurality of connecting channels, and the first group of pins and the second group of pins are connected through the plurality of connecting channels. The first chip has a third group of pins, the second chip has a fourth group of pins, and the third group of pins are connected to the first group of pins, and the fourth group of pins are connected to the second group of pins.