A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A thermally conductive silicone potting composition that comprises, each in a preset amount, (A) an organopolysiloxane having at least two alkenyl groups per molecule and having a viscosity of 0.01-100 Pa.Math.s at 25° C., (B) an organopolysiloxane one end of which is blocked with an alkoxysilyl group, etc., (C) a crystalline silica having an average particle size of 0.1 μm or more and less than 5 μm, (D) a crystalline silica having an average particle size of 5 μm or more and less than 100 μm, (E) an organohydrogen siloxane having at least two SiH groups per molecule, and (F) a hydrosilylation reaction catalyst, wherein the mass ratio of (C)/(D) is from 3/1 to 1/10.

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

A thermosetting resin composition, which constitutes at least a part of a heat-dissipating insulating member interposed between a heat-generating body and a heat-dissipating body, includes (A) an epoxy resin, (B) a thermosetting resin (excluding epoxy resin (A)), (C) a phenoxy resin having a mesogenic structure in the molecule, (D) thermally conductive particles, and (E) an organosiloxane compound.

A semiconductor power module comprises an insulating interposer comprising an insulative layer disposed between a lower metal layer, a first upper metal layer and a second upper metal layer, a semiconductor transistor die disposed on the first upper metal layer, an electrical connector connecting the semiconductor transistor die with the second upper metal layer, a housing enclosing the insulating interposer and the semiconductor transistor die, a first potting material covering at least selective portions of the semiconductor transistor die and the electrical connector; and a second potting material applied onto the first potting material, wherein the first and second potting materials are different from each other.

The present disclosure relates to a radio frequency (RF) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes an isolation portion, a back-end-of-line (BEOL) portion, and a front-end-of-line (FEOL) portion with a contact layer and an active section. The contact layer resides over the BEOL portion, the active section resides over the contact layer, and the isolation portion resides over the contact layer to encapsulate the active section. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the isolation portion of the thinned device die.

A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member. The first control electrodes and first resistive element are electrically connected via the first control circuit pattern, the second control electrodes and second resistive element are electrically connected via the second control circuit pattern, and at least one of the first output electrodes and at least one of the second output electrodes are electrically connected to each other via the first inter-board wiring member.

Disclosed is a flexible graphite structure that can be used as a heat dissipation sheet of a flexible electronic device through a graphite sheet unit including a stretchable area formed as a cut area or an overlapping area. A disclosed flexible graphite structure includes: a graphite sheet unit comprising a single graphite sheet layer or multiple graphite sheet layers having at least one stretchable area; and a stretchable sheet layer configured to be attached to at least one of both outermost sides of the graphite sheet unit and to cover the at least one stretchable area, wherein the at least one stretchable area is formed by providing at least one pair of cutout areas in the single graphite sheet layer or by providing an overlapping area where the single graphite sheet layer or the multiple graphite sheet layers overlap.

A plate vapor chamber array assembly with a plurality of plate vapor chambers joined in an array and each chamber having an evaporation area and an evacuated sealed chamber. The plate vapor chambers may be in direct contact with adjacent plate vapor chambers. A vapor chamber clamp surrounding the array has an inner surface engaging an outer edge of at least two of the plate vapor chambers of the array to press a surface of the plate vapor chamber array directly against the heat source.

A protective case includes a protective shell and a heat dissipation film. The protective shell has an inner wall. The heat dissipation film is attached on the inner wall. The heat dissipation film includes a plastic base layer, a heat diffusion layer and a heat absorption layer stacked sequentially in a direction away from the inner wall. Therefore, the heat dissipation film is attached on the inner wall of the protective shell to make the protective case for a mobile device possess desirable efficiency of heat dissipation.