A piezoelectric cooling system and method for driving the cooling system are described. The piezoelectric cooling system includes a first piezoelectric cooling element and a second piezoelectric cooling element. The first piezoelectric cooling element is configured to direct a fluid toward a surface of a heat-generating structure. The second piezoelectric cooling element is configured to direct the fluid to an outlet area after heat has been transferred to the fluid by the heat-generating structure.

An outdoor-mountable, telecommunications module, comprising: an environmentally hardened housing; telecommunications equipment encased within the housing and disposed for rotation about an axis within the housing; and a thermal load mitigation system employing (i) a heat spreader structure for thermal conduction of heat away from at least some heat-generating components of the telecommunications equipment, to a rotatable heat sink structure received within the housing, (ii) an arrangement for primarily thermal conduction of heat across a small air gap between the rotatable heatsink structure and a non-rotating heat sink structure collocated within the housing, and (iii) an arrangement for convective heat dissipation into the environment from a radiator structure disposed outside of the housing and which is in direct thermal conductive arrangement with the non-rotating heat sink structure disposed inside of the housing.

A heat dissipation structure assembly includes an elastic limiting member, a paste-type heat dissipation wall, a fitting member, a phase-change metal, and an assembling plate. The elastic limiting member is adapted to be disposed at a periphery of a heat source. The paste-type heat dissipation wall is adapted to be in contact with the periphery of the heat source. The fitting member is in contact with the paste-type heat dissipation wall and engaged with the elastic limiting member. The phase-change metal is adapted to be filled into a region among the fitting member, the paste-type heat dissipation wall, and the heat source. When a temperature of the phase-change metal exceeds a critical temperature, a state of the phase-change metal is changed to a liquid state. The assembling plate is connected to the fitting member, and the assembling plate is in contact with the paste-type heat dissipation wall.

Exfoliated graphite materials, and composite materials including exfoliated graphite, having enhanced through-plane thermal conductivity can be used in thermal management applications and devices. Methods for making such materials and devices involve processing exfoliated graphite materials such as flexible graphite to orient or re-orient the graphite flakes in one or more regions of the material.

Exfoliated graphite materials, and composite materials including exfoliated graphite, having enhanced through-plane thermal conductivity can be used in thermal management applications and devices. Methods for making such materials and devices involve processing exfoliated graphite materials such as flexible graphite to orient or re-orient the graphite flakes in one or more regions of the material.

A disclosed semiconductor device includes a package substrate, a first semiconductor die coupled to the package substrate, a package lid attached to the package substrate and covering the semiconductor die, and a thermal interface material located between a top surface of the semiconductor die and an internal surface of the package lid. The semiconductor device may further include a dam formed on the internal surface of the package lid. The dam may constrain the thermal interface material on one or more sides of the first semiconductor die such that the thermal interface material is located within a predetermined volume between the top surface of the first semiconductor die and the internal surface of the package lid during a reflow operation. The package lid may include a metallic material and the dam may include an epoxy material formed as a single continuous structure or may be formed as several disconnected structures.

A disclosed semiconductor device includes a package substrate, a first semiconductor die coupled to the package substrate, a package lid attached to the package substrate and covering the semiconductor die, and a thermal interface material located between a top surface of the semiconductor die and an internal surface of the package lid. The semiconductor device may further include a dam formed on the internal surface of the package lid. The dam may constrain the thermal interface material on one or more sides of the first semiconductor die such that the thermal interface material is located within a predetermined volume between the top surface of the first semiconductor die and the internal surface of the package lid during a reflow operation. The package lid may include a metallic material and the dam may include an epoxy material formed as a single continuous structure or may be formed as several disconnected structures.

A semiconductor package includes a semiconductor die, a first thermal conductive pattern and a second thermal conductive pattern. The semiconductor die is encapsulated by an encapsulant. The first thermal conductive pattern is disposed aside the semiconductor die in the encapsulant. The second thermal conductive pattern is disposed over the semiconductor die, wherein the first thermal conductive pattern is thermally coupled to the semiconductor die through the second thermal conductive pattern and electrically insulated from the semiconductor die.

An apparatus is provided which comprises: a die comprising an integrated circuit, a first material layer comprising a first metal, the first material layer on a surface of the die, and extending at least between opposite lateral sides of the die, a second material layer comprising a second metal over the first material layer, and a third material layer comprising silver particles and having a porosity greater than that of the second material layer, the third material layer between the first material layer and the second material layer. Other embodiments are also disclosed and claimed.

A cooling system and method for using the cooling system are described. The cooling system includes a plurality of individual piezoelectric cooling elements spatially arranged in an array extending in at least two dimensions, a communications interface and driving circuitry. The communications interface is associated with the individual piezoelectric cooling elements such that selected individual piezoelectric cooling elements within the array can be activated based at least in part on heat energy generated in the vicinity of the selected individual piezoelectric cooling elements. The driving circuitry is associated with the individual piezoelectric cooling elements and is configured to drive the selected individual piezoelectric cooling elements.