A power conversion device includes a plurality of semiconductor modules, a plurality of coolers, and a frame. The frame pressurizes and holds a stacked body in which the semiconductor modules and the coolers are alternately stacked. The frame includes a first frame and a second frame that sandwich the stacked body therebetween. The first frame is a plate material bent to surround the stacked body from three directions, and includes a pair of side walls extending in the stacking direction of the stacked body, and an abutting wall extending between the side walls and abutting the stacked body. The abutting wall is bent outward from the frame. Each of the side walls is bent inward from the frame.

A power conversion device includes a plurality of semiconductor modules, a plurality of coolers, and a frame. The frame pressurizes and holds a stacked body in which the semiconductor modules and the coolers are alternately stacked. The frame includes a first frame and a second frame that sandwich the stacked body therebetween. The first frame is a plate material bent to surround the stacked body from three directions, and includes a pair of side walls extending in the stacking direction of the stacked body, and an abutting wall extending between the side walls and abutting the stacked body. The abutting wall is bent outward from the frame. Each of the side walls is bent inward from the frame.

According to an aspect of the disclosure, an example microelectronic device assembly includes a substrate, a microelectronic element electrically connected to the substrate, a stiffener element overlying the substrate, and a heat distribution device overlying the rear surface of the microelectronic element. The stiffener element may extend around the microelectronic element. The stiffener element may include a first material that has a first coefficient of thermal expansion (“CTE”). A surface of the stiffener element may face toward the heat distribution device. The heat distribution device may include a second material that has a second CTE. The first material may be different than the second material. The first CTE of the first material of the stiffener element may be greater than the second CTE of the second material of the heat distribution device.

ABSTRACT An apparatus is for collecting a by-product in a semiconductor manufacturing process. The apparatus includes: a housing cooling channel on an inner wall thereof to cool exhaust gas which is temperature-controlled by a heater while being introduced through a gas inlet of an upper plate; an internal collecting tower including multiple vertical plates and multiple horizontal plates that are assembled, and condensing and collecting a by-product from the exhaust gas; a main cooling channel having a serpentine shape and cooling the exhaust gas uniformly by using coolant while passing through the internal collecting tower; and a multi-connection pipe sequentially supplying the coolant to the upper plate cooling channel, the housing cooling channel, and the main cooling channel and discharging the coolant, by using a supply pipe and a discharge pipe that are provided outside the housing.

ABSTRACT An apparatus is for collecting a by-product in a semiconductor manufacturing process. The apparatus includes: a housing cooling channel on an inner wall thereof to cool exhaust gas which is temperature-controlled by a heater while being introduced through a gas inlet of an upper plate; an internal collecting tower including multiple vertical plates and multiple horizontal plates that are assembled, and condensing and collecting a by-product from the exhaust gas; a main cooling channel having a serpentine shape and cooling the exhaust gas uniformly by using coolant while passing through the internal collecting tower; and a multi-connection pipe sequentially supplying the coolant to the upper plate cooling channel, the housing cooling channel, and the main cooling channel and discharging the coolant, by using a supply pipe and a discharge pipe that are provided outside the housing.

A cooling system and method for using the cooling system are described. The cooling system includes a plurality of individual piezoelectric cooling elements spatially arranged in an array extending in at least two dimensions, a communications interface and driving circuitry. The communications interface is associated with the individual piezoelectric cooling elements such that selected individual piezoelectric cooling elements within the array can be activated based at least in part on heat energy generated in the vicinity of the selected individual piezoelectric cooling elements. The driving circuitry is associated with the individual piezoelectric cooling elements and is configured to drive the selected individual piezoelectric cooling elements.

A cooling system and method for using the cooling system are described. The cooling system includes a plurality of individual piezoelectric cooling elements spatially arranged in an array extending in at least two dimensions, a communications interface and driving circuitry. The communications interface is associated with the individual piezoelectric cooling elements such that selected individual piezoelectric cooling elements within the array can be activated based at least in part on heat energy generated in the vicinity of the selected individual piezoelectric cooling elements. The driving circuitry is associated with the individual piezoelectric cooling elements and is configured to drive the selected individual piezoelectric cooling elements.

A pump includes a pump flow path and electrodes and dielectric members in the pump flow path to allow a fluid to pass through the electrodes and the dielectric members in a flowing direction. The electrodes and the dielectric members are alternately stacked in the flowing direction so that a dielectric member is located between adjacent electrodes. Among the electrodes, an inter-electrode polarity of each pair of electrodes is different from that of an adjacent pair of electrodes. The dielectric members include a first dielectric member at a position of an odd-numbered dielectric member counted from the most upstream side of the flowing direction and a second dielectric member at a position of an even-numbered dielectric member counted from the most upstream side of the flowing direction. Material of the first and second dielectric members provide signs of a zeta potential opposite to each other.

A pump includes a pump flow path and electrodes and dielectric members in the pump flow path to allow a fluid to pass through the electrodes and the dielectric members in a flowing direction. The electrodes and the dielectric members are alternately stacked in the flowing direction so that a dielectric member is located between adjacent electrodes. Among the electrodes, an inter-electrode polarity of each pair of electrodes is different from that of an adjacent pair of electrodes. The dielectric members include a first dielectric member at a position of an odd-numbered dielectric member counted from the most upstream side of the flowing direction and a second dielectric member at a position of an even-numbered dielectric member counted from the most upstream side of the flowing direction. Material of the first and second dielectric members provide signs of a zeta potential opposite to each other.

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a metal sintered material such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.