Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes first and second gate dielectric layers over a fin. First and second gate electrodes are over the first and second gate dielectric layers, respectively, the first and second gate electrodes both having an insulating cap having a top surface. First dielectric spacer are adjacent the first side of the first gate electrode. A trench contact structure is over a semiconductor source or drain region adjacent first and second dielectric spacers, the trench contact structure comprising an insulating cap on a conductive structure, the insulating cap of the trench contact structure having a top surface substantially co-planar with the insulating caps of the first and second gate electrodes.

A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

An integrated circuit device includes: a lower memory stack including a plurality of lower word lines located on a substrate, an upper memory stack located on the lower memory stack and including a plurality of upper word lines, at least one first lower interconnection layer extending in a horizontal direction at a first vertical level between the lower memory stack and the upper memory stack, and configured to be electrically connected to at least one lower word line selected from the plurality of lower word lines, a separate insulating film covering at least one first lower interconnection layer, and at least one first upper interconnection layer extending in the horizontal direction at a second vertical level higher than the upper memory stack, and configured to be electrically connected to at least one upper word line selected from the upper word lines.

A semiconductor device package includes a first circuit layer and an emitting device. The first circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device is disposed on the second surface of the first circuit layer. The emitting device has a first surface facing the second surface of the first circuit layer, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device has a conductive pattern disposed on the second surface of the emitting device. The lateral surface of the emitting device and the lateral surface of the first circuit layer are discontinuous.

Interconnect structures that maximize integrated circuit (IC) density and corresponding formation techniques are disclosed. An exemplary IC device includes a gate layer extending along a first direction. An interconnect structure disposed over the gate layer includes odd-numbered interconnect routing layers oriented along a second direction that is substantially perpendicular to the first direction and even-numbered interconnect routing layers oriented along a third direction that is substantially parallel to the first direction. In some implementations, a ratio of a gate pitch of the gate layer to a pitch of a first of the even-numbered interconnect routing layers to a pitch of a third of the even-numbered interconnect routing layers is 3:2:4. In some implementations, a pitch of a first of the odd-numbered interconnect routing layers to a pitch of a third of the odd-numbered interconnect routing layers to a pitch of a seventh of the odd-numbered interconnect routing layers is 1:1:2.

An integrated circuit includes a standard cell including a first output pin and a second output pin configured to each output the same output signal, a first routing path connected to the first output pin, and a second routing path connected to the second output pin. The first routing path includes a first cell group including at least one load cell, the second routing path includes a second cell group including at least one load cell, and the first routing path and the second routing path are electrically disconnected from each other outside the standard cell.

The present disclosure relates to an integrated chip including a semiconductor device. The semiconductor device includes a first source/drain structure, a second source/drain structure, a stack of channel structures, and a gate structure. The stack of channel structures and the gate structure are between the first and second source/drain structures. The gate structure surrounds the stack of channel structures. A first conductive wire overlies and is spaced from the semiconductor device. The first conductive wire includes a first stack of conductive layers. A first conductive contact extends through a dielectric layer from the first conductive wire to the first source/drain structure. The first conductive contact is on a back-side of the first source/drain structure.

A method includes forming a gate structure over a substrate; forming a source/drain region adjacent the gate structure; forming a first interlayer dielectric (ILD) over the source/drain region; forming a contact plug extending through the first ILD that electrically contacts the source/drain region; forming a silicide layer on the contact plug; forming a second ILD extending over the first ILD and the silicide layer; etching an opening extending through the second ILD and the silicide layer to expose the contact plug, wherein the silicide layer is used as an etch stop during the etching of the opening; and forming a conductive feature in the opening that electrically contacts the contact plug.

A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric layer disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure, wherein the interconnect structure laterally connects to at least one edge of the 2D conductive structure.

Various embodiments of the present disclosure are directed towards methods for forming conductive lines and conductive sockets using mandrels with turns, as well as the resulting conductive lines and sockets. A conductive socket of the present disclosure may have a top layout with at least one turn and with a width that is substantially the same as that of conductive lines along the at least one turn. Such a top layout may reduce loading during formation of the conductive socket. Conductive lines of the present disclosure may comprise outer conductive lines and inner conductive lines having ends laterally offset from ends of the outer conductive lines along lengths of the conductive lines. Formation of the inner and outer conductive lines using a mandrel with a turn may enlarge a process window while cutting ends of a sidewall spacer structure from which the inner and outer conductive lines are formed.