Integrated circuits (ICs), including capacitors and inductors, employing directly coupled metal lines between vertically-adjacent interconnect layers for reduced coupling resistance, and related fabrication methods. By directly coupled, it is meant that there is not an intermediate vertical interconnect access (via) layer with a via(s) interconnecting the metal lines in vertically-adjacent interconnect layers. An overlying and underlying metal line in respective and vertically-adjacent overlying and underlying interconnect layers are directly coupled to each other without the need for an intermediate via layer. For example, directly coupled metal in adjacent interconnect layers of lC can reduce contact resistance between the metal lines and reduce the overall height of the IC. An insulating layer(s) can be disposed in select recessed regions between the overlying interconnect layer and the underlying interconnect layer to insulate an overlying metal line from another vertically-intersecting underlying metal line that are not intended to be electrically coupled together.

Example chip structures are described. One example chip structure includes a die, a first chip bond pad, and a second chip bond pad. A first radio frequency circuit, a second radio frequency circuit, a first interconnect metal wire, and a second interconnect metal wire are disposed in the die. The first interconnect metal wire is connected to the first radio frequency module, and is configured to provide an alternating current ground for the first radio frequency module. The second interconnect metal wire is connected to the second radio frequency module, and is configured to provide an alternating current ground for the second radio frequency module. The first chip bond pad and the second chip bond pad are disposed on a surface of the die.

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

A semiconductor device includes an inductance structure and a shielding structure. The shielding structure is arranged to at least partially shield the inductance structure from external electromagnetic fields. The shielding structure includes a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure.

An electronic package in which at least one magnetically permeable member is disposed between a carrier and an electronic component, where the electronic component has a first conductive layer, and the carrier has a second conductive layer, such that the magnetically permeable element is located between the first conductive layer and the second conductive layer. Moreover, a plurality of conductive bumps that electrically connect the first conductive layer and the second conductive layer are arranged between the electronic component and the carrier to surround the magnetically permeable member for generating magnetic flux.

A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.

A transistor device includes a transistor cell comprising a channel region, a gate runner that is electrically connected to a gate electrode on the channel region and physically separated from the gate electrode, and a harmonic termination circuit electrically connected to the gate runner between the gate electrode and an input terminal of the transistor device, the harmonic termination circuit configured to terminate signals at a harmonic frequency of a fundamental operating frequency of the transistor device.

Systems and methods of manufacture are disclosed for semiconductor device assemblies having a front side metallurgy portion, a substrate layer adjacent to the front side metallurgy portion, a plurality of through-silicon-vias (TSVs) in the substrate layer, metallic conductors located within at least a portion of the plurality of TSVs, and at least one conductive connection circuitry between the metallic conductors and the front side metallurgy portion. The plurality of TSVs with metallic conductors located within are configured to form an antenna structure. Selectively breakable connective circuitry is used to form and/or tune the antenna structure.

Structures that include a peaking inductor and a T-coil, and methods associated with forming such structures. A back-end-of-line interconnect structure includes a first metallization level, a second metallization level, and a third metallization level arranged between the first metallization level and the second metallization level. The T-coil includes a first inductor with a first coil arranged in the first metallization level and a second inductor with a second coil arranged in the second metallization level. A peaking inductor includes a coil arranged in the third metallization level. The first coil of the first inductor, the second coil of the second inductor, and the coil of the peaking inductor are stacked in the back-end-of-line interconnect structure with an overlapping arrangement.

Improve EM coupling for the wafer-bonding process from a first wafer to a second wafer by a shielding technique. Examples may include building an EM shield implemented by BEOL-stacks/routings, bonding contacts, and TSVs for a closed-loop shielding platform for the integrated device to minimize EM interference from active devices due to eddy currents. The shield may be implemented in the active device layer during a wafer-to-wafer bonding-process that uses two different device layers/wafers, an active device layer/wafer and a passive device layer/wayer. The shield may be designed by the patterned routings for both I/O ports and the GND contacts.