This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.

An antenna module is described. The antenna module include a ground plane in a multilayer substrate. The antenna module also includes a mold on the multilayer substrate. The antenna module further includes a conductive wall separating a first portion of the mold from a second portion of the mold. The conductive wall is electrically coupled to the ground plane. A conformal shield may be placed on a surface of the second portion of the mold. The conformal shield is electrically coupled to the ground plane.

A DC/DC converter includes: electronic components group including a first capacitor, a high-voltage-side switching element, a low-voltage-side switching element, an inductor, and a second capacitor and constituting a half-bridge circuit; and a substrate including a high-voltage region, a low-voltage region, a connection region, and a pair of ground regions. The first capacitor is mounted across one of the ground regions and the high-voltage region. The high-voltage-side switching element is mounted across the high-voltage region and the connection region. The low-voltage-side switching element is mounted across the connection region and one of the ground regions. The inductor is mounted across the connection region and the low-voltage region. The second capacitor is mounted across the low-voltage region and one of the ground regions.

In a circuit block, a plurality of cell rows, each being comprised of a plurality of standard cells arranged in a first direction, are arranged in a second direction perpendicular to the first direction, thereby forming a circuit of SOI transistors. The circuit block includes a plurality of antenna cells, each including an antenna diode provided between a power supply line and a substrate or a well. In at least a part of the circuit block, the antenna cells are arranged at constant intervals in at least one of the first and second directions.

A reconfigurable multi-stack inductor formed within a semiconductor structure may include a first inductor structure located within a first metal layer of the semiconductor structure, a first ground shielding structure located within the first metal layer that is electrically isolated from and circumferentially bounds the first inductor structure, and a second inductor structure located within a second metal layer of the semiconductor structure, whereby the second inductor structure is electrically coupled to the first inductor structure. A second ground shielding structure located within the second metal layer is electrically isolated from and circumferentially bounds the second inductor structure, whereby the first and second inductor generate a first inductance value based on the first ground shielding structure and second ground shielding structure being coupled to ground, and the first and second inductor generate a second inductance value based on the first ground shielding structure and second ground shielding structure electrically floating.

The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device.

A semiconductor device includes a substrate and a first conductive layer formed over a first surface of the substrate. The first conductive layer is patterned into a first portion of a first passive circuit element. The first conductive layer is patterned to include a first coiled portion. A second conductive layer is formed over a second surface of the substrate. The second conductive layer is patterned into a second portion of the first passive circuit element. The second conductive layer is patterned to include a second coiled portion exhibiting mutual inductance with the first coiled portion. A conductive via formed through the substrate is coupled between the first conductive layer and second conductive layer. A semiconductor component is disposed over the substrate and electrically coupled to the first passive circuit element. An encapsulant is deposited over the semiconductor component and substrate. The substrate is mounted to a printed circuit board.

A semiconductor device which controls output of a plurality of voltages is provided. A power supply control circuit which drives the semiconductor device includes a reference voltage generating circuit and a stabilized power supply circuit. The stabilized power supply circuit has a function of outputting a voltage input from a sample-and-hold circuit and amplified by the amplifier circuit. A control circuit has a function of setting an output voltage of the power supply control circuit. The sample-and-hold circuit in the stabilized power supply circuit includes a transistor whose on/off state is controlled. In such a configuration, a voltage set by the control circuit can be held and output.

A monolithic power switch provides a semiconductor layer, a three dimensional FET formed in the semiconductor layer to modulate currents through the semiconductor layer, and a toroidal inductor with a ceramic magnetic core formed on the semiconductor layer around the FET and having a first winding connected to the FET.

An inductive component is disclosed. The inductive component comprises a magnetic body and a coil in the magnetic body, wherein a first protrusion and a second protrusion are formed on the bottom surface of the magnetic body, wherein the first protrusion comprises a first electrode disposed on the peak surface of the first protrusion, and the second protrusion comprises a second electrode disposed on the peak surface of the second protrusion, wherein the first electrode and the second electrode are electrically connected to a first end and a second end of the coil, and a space is formed by the first protrusion, the second protrusion and the bottom surface of the magnetic body for accommodating electronic devices.