In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A thermal management device is described. The thermal management device includes a housing having an upper wall, a lower wall, and a side wall. The upper wall has an outer surface and an inner surface. The lower wall has an outer surface, an inner surface and an inner height between the inner surface of the upper wall and the inner surface of the lower wall. The thermal management device includes a working fluid within the housing. The inner height of the housing is sized to form a continuous meniscus of the working fluid from the inner surface of the upper wall to the inner surface of the lower wall.

A semiconductor device includes a wiring substrate provided with a plurality of pads electrically connected to a semiconductor chip in a flip-chip interconnection. The wiring substrate includes a pad forming layer in which a signal pad configured to receive transmission of a first signal and a second pad configured to receive transmission of a second signal different from the first signal are formed and a first wiring layer located at a position closest to the pad forming layer. In the wiring layer, a via land overlapping with the signal pad, a wiring connected to the via land, and a wiring connected to the second pad and extending in an X direction are formed. In a Y direction intersecting the X direction, a width of the via land is larger than a width of the wiring. A wiring is adjacent to the via land and overlaps with the signal pad.

A system for packaging integrated circuits includes an integrated circuit having one or more integrated circuit terminals. The system for packaging integrated circuits also includes a substrate having one or more substrate terminals. The system for packaging integrated circuits further includes an electrically conductive adhesive in communication with the integrated circuit terminals and the substrate terminals. The electrically conductive adhesive establishes an electrical connection between each of the one or more integrated circuit terminals and the one or more substrate terminals. The electrical connection between each of the one or more integrated circuit terminals and the one or more substrate terminals are enclosed in a dielectric. The system for packaging integrated circuits includes a second adhesive in communication with the integrated circuit and the substrate, wherein the second adhesive couples the integrated circuit and substrate together.

A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main surface of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.

According to a first aspect of the present disclosure, an electronic device is provided which comprises: a substrate; an integrated circuit; a layer of conductive glue between the substrate and the integrated circuit; at least one first electrode connected to the conductive glue and at least one second electrode connected to the conductive glue; wherein the first electrode and the second electrode are arranged to receive a voltage generator input, such that a capacitance develops between said first electrode and second electrode, wherein at least a part of said capacitance develops through the layer of conductive glue; and wherein the first electrode and the second electrode are arranged to output said capacitance. According to a second aspect of the present disclosure, a corresponding method of manufacturing an electronic device is conceived.

.[.Disclosed is an electronic module with high routing efficiency and other new possibilities in conductor design. The electronic module comprises a wiring layer (3), a component (1) having a surface with contact terminals (2) and first contact elements (6) that connect at least some of the contact terminals (2) to the wiring layer (3). The electronic module is provided with at least one conducting pattern (4) on the surface of the component (1) but spaced apart from the contact terminals (2). The electronic module further comprises a dielectric (5) and at least one second contact element (7) that connects the conducting pattern (4) to the wiring layer (3) through a portion of said dielectric (5). Methods of manufacturing such modules are also disclosed..]. .Iadd.An electronic module including a first wiring layer, a dielectric supporting the first wiring layer, wherein the first wiring layer is embedded in the dielectric, a component having a first surface and at least one contact terminal on the first surface, an additional passivation layer on the first surface of the component and in contact with the dielectric, a conducting pattern on the additional passivation layer on the first surface of the component and spaced apart from each of the at least one contact terminal, at least one first contact element extending inside the dielectric for making at least one electrical connection between the first wiring layer and the at least one contact terminal, and at least one second contact element extending inside the dielectric for making at least one electrical connection between the first wiring layer and the conducting pattern..Iaddend.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

The present invention discloses a liquid crystal panel, includes a color filter substrate, an array substrate, a liquid crystal disposed between the color filter substrate and the array substrate, a chip on film, a driver chip and a circuit board disposed on the chip on film, one end of the chip on film is bonded to an end face of the array substrate and is electrically connected with a metal line array in the array substrate, the other end of the chip on film is bound with the circuit board. The invention also discloses a method for fabricating a liquid crystal panel and a display apparatus. When applying signal to the liquid crystal panel, the chip on film is bonded to the end face of the array substrate to realize the conduction of the metal line array avoiding the longer bonding region extended from a side of the TFT substrate.

Disclosed are semiconductor package structure and semiconductor modules including the same. The semiconductor module includes a circuit board, a first semiconductor package over the circuit board, and a connection structure on the circuit board and connecting the circuit board and the first semiconductor package. The first semiconductor package includes a first package substrate. A difference in coefficient of thermal expansion between the connection structure and the circuit board may be less than a difference in coefficient of thermal expansion between the circuit board and the first package substrate.