A display device includes a base layer including a display area and a non-display area, a pixel circuit layer disposed on a front surface of the base layer and including a driving transistor and a switch transistor, and an antistatic circuit layer disposed on a rear surface of the base layer and including at least one electrostatic diode.

A display apparatus having a noncontact input function is provided. The display apparatus has a first function of detecting, with a light-receiving device, light irradiated from a light source outside a display portion and blocked by a pointing object to recognize the position pointed by the pointing object, and a second function of detecting, with the light-receiving device, light irradiated from a light source inside or outside the display portion and reflected by the pointing object to recognize the position pointed by the pointing object. The display apparatus can operate by switching the first function and the second function in accordance with the intensity of the light irradiated from the light source outside the display portion.

A LED display module includes multiple pixel rows. A first pixel row includes a plurality of first pixel units. Each of the plurality of first pixel units includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. Sub-pixels of the plurality of first pixel units form at least one first sub-pixel row. A first row of the at least one first sub-pixel row includes at least two types of the first sub-pixel, the second sub-pixel, and the third sub-pixel. A last pixel row includes multiple second pixel units. Each of the plurality of second pixel units includes a first sub-pixel, a second sub-pixel,and a third sub-pixel. Sub-pixels of the plurality of second pixel units form at least one second sub-pixel row. A last row of the at least one second sub-pixel row includes at least two types of the first sub-pixel, the second sub-pixel, and the third sub-pixel

In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.

The present application provides a method of manufacturing a semiconductor structure. Due to different hole ratios of openings of a mask corresponding to one unit region of a substrate, flow rates of reactive gas in openings are different when growing a light emitting layer. In this way, growth rates of the light emitting layers in openings are different, and doping efficiencies of the light emitting layers in openings are different, such that composition proportions of respective elements in the grown light emitting layer are different, and the light emitting wavelengths of LEDs are different. The processes are simple, and a semiconductor structure applied to a full-color LED can be manufactured on one substrate, which can reduce a size of the full-color LED.

Provided are an LED display pixel structure, an LED display module, and an LED display screen. The LED display pixel structure includes an LED pixel unit (1) and a layered extraction structure arranged above the LED pixel unit (1). The layered extraction structure is configured to receive light from the LED pixel unit (1) and emit the light. The LED display pixel structure includes a first retardation film layer (31), a linear polarizer (32), and a second retardation film layer (33), which are sequentially stacked. The light emitted by the LED pixel unit (1) sequentially passes through the first retardation film layer (31), the linear polarizer (32), and the second retardation film layer (33). The first retardation film layer (31) and the second retardation film layer (33) are quarter-wave plates.

According to the present inventive concept, a display device includes a display panel in which a plurality of display modules are horizontally aligned in an M*N matrix, wherein each of the plurality of display modules includes: a mounting surface on which a plurality of inorganic light-emitting elements are mounted; a substrate including a back surface disposed opposite to the mounting surface; and a module heat-dissipation member in contact with the back surface of the substrate to dissipate heat generated in the substrate, wherein the display panel includes a panel heat-dissipation member which connects the respective module heat-dissipation members so as to dissipate heat between the respective module heat-dissipation members of the plurality of display modules.

According to the present inventive concept, a display device includes a display panel in which a plurality of display modules are horizontally aligned in an M*N matrix, wherein each of the plurality of display modules includes: a mounting surface on which a plurality of inorganic light-emitting elements are mounted; a substrate including a back surface disposed opposite to the mounting surface; and a module heat-dissipation member in contact with the back surface of the substrate to dissipate heat generated in the substrate, wherein the display panel includes a panel heat-dissipation member which connects the respective module heat-dissipation members so as to dissipate heat between the respective module heat-dissipation members of the plurality of display modules.

A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

A backplane and a glass-based circuit board. The backplane includes: a base substrate and a plurality of light-emitting units, arranged in an array on the base substrate. Each of the light-emitting units includes at least one light-emitting sub-unit; the light-emitting sub-unit includes a connection line and a plurality of light-emitting diode chips connected with the connection line, and the light-emitting diode chips are located on a side of the connection line away from the base substrate. The connection line comprises a first connection portion, a second connection portion and a third connection portion; in each of the light-emitting sub-units, the third connection portion comprises a plurality of connection sub-portions, each of the connection sub-portions comprise at least one electrical contact point; the electrical contact points at adjacent ends of adjacent connection sub-portions constitute an electrical contact point pair.