Field-effect transistor (FET) devices are described herein that include an insulator layer, a field-effect transistor implemented over the insulator layer, a substrate layer implemented under the insulator layer, and a proximity electrode that extends at least partially through the insulator layer and positioned from the FET by a distance that is less than about 5 μm. The FET device can include one or more substrate contact features as well.

Field-effect transistor (FET) devices are described herein that include an insulator layer, a field-effect transistor implemented over the insulator layer, a substrate layer implemented under the insulator layer, and a proximity electrode that extends at least partially through the insulator layer and positioned from the FET by a distance that is less than about 5 μm. The FET device can include one or more substrate contact features as well.

Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the first insulating film; and a first transistor over the capacitor. The first transistor includes the second electrode, a second insulating film over the second electrode, an oxide semiconductor film over the second insulating film, and a first source electrode and a first drain electrode over the oxide semiconductor film. The first source electrode and the first drain electrode are electrically connected to the oxide semiconductor film.

Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the first insulating film; and a first transistor over the capacitor. The first transistor includes the second electrode, a second insulating film over the second electrode, an oxide semiconductor film over the second insulating film, and a first source electrode and a first drain electrode over the oxide semiconductor film. The first source electrode and the first drain electrode are electrically connected to the oxide semiconductor film.

Embodiments of the present invention provide a structure and method for fabrication of deep trenches in semiconductor-on-insulator structures. An upper portion of the deep trench cavity is formed to expose a sidewall of the buried insulator layer. A protective layer is disposed on the sidewall of the buried insulator layer. Then, the cavity is extended into the bulk substrate. The protective layer prevents over etch of the buried insulator layer during this process. The protective layer is then partially removed, such that the semiconductor-on-insulator (SOI) layer sidewall is exposed. The trench is then filled with a conductive fill material, such as polysilicon. The protection of the buried insulator (BOX) layer allows the trenches to be placed closer together while reducing the risk of a short circuit due to over etch, thereby increasing circuit density and product yield.

Embodiments of the present invention provide a structure and method for fabrication of deep trenches in semiconductor-on-insulator structures. An upper portion of the deep trench cavity is formed to expose a sidewall of the buried insulator layer. A protective layer is disposed on the sidewall of the buried insulator layer. Then, the cavity is extended into the bulk substrate. The protective layer prevents over etch of the buried insulator layer during this process. The protective layer is then partially removed, such that the semiconductor-on-insulator (SOI) layer sidewall is exposed. The trench is then filled with a conductive fill material, such as polysilicon. The protection of the buried insulator (BOX) layer allows the trenches to be placed closer together while reducing the risk of a short circuit due to over etch, thereby increasing circuit density and product yield.

A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

An electronic device including a driving circuit substrate and a plurality of light emitting units is provided. The driving circuit substrate includes a plurality of active elements, the light emitting units are disposed on the driving circuit substrate, each of the light emitting units is electrically connected to the corresponding active element, wherein one of the active elements provides a first current to the corresponding light emitting unit, such that lighting efficiency of the light emitting units are ranged from 70% to 100%.

An array substrate comprises a TFT, a data line, a gate line and a passivation layer covering the TFT, the data line and the gate line. The array substrate further includes a first conductive structure and a second conductive structure connected with the first conductive structure, the first conductive structure is disposed on the passivation layer and above the TFT, and the second conductive structure is disposed on the passivation layer and above the data line and/or gate line. A method for manufacturing the array substrate and a display device having such an array substrate are also provided.