A method used in forming an array of memory cells comprises forming a vertical stack comprising transistor material directly above insulator material. A mask is used to subtractively etch both the transistor material and thereafter the insulator material to form a plurality of pillars that individually comprise the transistor material and the insulator material. The insulator material is laterally-recessed from opposing lateral sides of individual of the pillars selectively relative to the transistor material of the individual pillars. The individual pillars are formed to comprise a first capacitor electrode that is in void space formed from the laterally recessing. Capacitors are formed that individually comprise the first capacitor electrode of the individual pillars. A capacitor insulator is aside the first capacitor electrode of the individual pillars and a second capacitor electrode is laterally-outward of the capacitor insulator. Vertical transistors are formed above the capacitors and individually comprise the transistor material of the individual pillars. Other aspects, including structure independent of method, are disclosed.

A method used in forming an array of memory cells comprises forming a vertical stack comprising transistor material directly above insulator material. A mask is used to subtractively etch both the transistor material and thereafter the insulator material to form a plurality of pillars that individually comprise the transistor material and the insulator material. The insulator material is laterally-recessed from opposing lateral sides of individual of the pillars selectively relative to the transistor material of the individual pillars. The individual pillars are formed to comprise a first capacitor electrode that is in void space formed from the laterally recessing. Capacitors are formed that individually comprise the first capacitor electrode of the individual pillars. A capacitor insulator is aside the first capacitor electrode of the individual pillars and a second capacitor electrode is laterally-outward of the capacitor insulator. Vertical transistors are formed above the capacitors and individually comprise the transistor material of the individual pillars. Other aspects, including structure independent of method, are disclosed.

Improving a reliability of a semiconductor device. A resistive element is comprised of a semiconductor layer of the SOI substrate and an epitaxial semiconductor layer formed on the semiconductor layer. The epitaxial semiconductor layer EP has two semiconductor portions formed on the semiconductor layer and spaced apart from each other. The semiconductor layer has a region on where one of the semiconductor portion is formed, a region on where another of the semiconductor portion is formed, and a region on where the epitaxial semiconductor layer is not formed

Improving a reliability of a semiconductor device. A resistive element is comprised of a semiconductor layer of the SOI substrate and an epitaxial semiconductor layer formed on the semiconductor layer. The epitaxial semiconductor layer EP has two semiconductor portions formed on the semiconductor layer and spaced apart from each other. The semiconductor layer has a region on where one of the semiconductor portion is formed, a region on where another of the semiconductor portion is formed, and a region on where the epitaxial semiconductor layer is not formed

Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

The present invention relates to a system comprising an electronic apparatus which comprises:—an electronic device comprising:—a gate electrode (G, BE);—a dielectric (D) arranged over the gate electrode (G, BE); and—a charge sensing structure (CE) with a 2-dimensional charge sensing layer to provide a gate capacitance (C.sub.g) between the charge sensing structure (CE) and the gate electrode structure (G, BE) and a quantum capacitance (C.sub.q) resulting in a total capacitance (C.sub.tot);—a voltage detector to detect an output voltage (V.sub.o) stored in the total capacitance (C.sub.tot). The system further comprises means to apply a gate voltage (V.sub.g) to the gate electrode structure (G, BE) selected to:—make the device operate around most sensitive point of fermi level of the charge sensing structure (CE); and—tune the quantum capacitance (C.sub.q). The present invention also relates to an electronic apparatus adapted to allow the tuning of its quantum capacitance.

A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

A semiconductor device includes a substrate, an optical element, and a semiconductor element. The substrate includes a first region and a second region which are regions differing from each other. The optical element is formed in one of the first region and the second region. The electric element is formed in another of the first region and the second region. The first region includes a first insulating layer and a first semiconductor layer formed on the first insulating layer. The second region includes the first insulating layer, the first semiconductor layer, a second insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second insulating layer.