A photovoltaic cell assembly suitable for use in a dense array concentrated photovoltaic cell module includes a plurality of photovoltaic cells mounted on a substrate and a by-pass diode associated with each cell to allow the cell to be by-passed in the electrical circuit in the event that the cell fails or has low illumination. The diodes are positioned in the shadows of the cells. The diodes provide direct pathways for heat and electricity from the cells to the substrate.

The disclosure relates to a metallic interconnect member for connecting a first solar cell to a second solar cell. The interconnect member includes one or more serpentine paths having substantially perpendicular loops. The interconnect member may include two connection pads for connecting to the first solar cell. A further connection pad for connecting to a bypass diode may be included. The disclosure further relates to a string of solar cells including a first and a second solar cell connected by an interconnect member.

A photovoltaic cell assembly suitable for use in a dense array concentrated photovoltaic cell module includes a plurality of photovoltaic cells mounted on a substrate and a by-pass diode associated with each cell to allow the cell to be by-passed in the electrical circuit in the event that the cell fails or has low illumination. The diodes are positioned in the shadows of the cells. The diodes provide direct pathways for heat and electricity from the cells to the substrate.

A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.

An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

The disclosure relates to a metallic interconnect member for connecting a first solar cell to a second solar cell. The interconnect member includes one or more serpentine paths having substantially perpendicular loops. The interconnect member may include two connection pads for connecting to the first solar cell. A further connection pad for connecting to a bypass diode may be included. The disclosure further relates to a string of solar cells including a first and a second solar cell connected by an interconnect member.

One embodiment can provide a photovoltaic roof module. The photovoltaic roof module can include a plurality of photovoltaic roof tiles positioned side by side. A respective solar roof tile comprises a plurality of photovoltaic structures positioned between a front cover and a back cover, and the photovoltaic structures are electrically coupled to each other in series. The photovoltaic roof tiles are electrically coupled to each other in parallel.

This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.