The invention relates to a sensor for a terahertz imaging system, comprising an array of terahertz radiation receivers; and an array of terahertz radiation transmitters having the same pitch as the array of receivers, located between the array of receivers and an analysis zone located in the near field of the transmitters, and configured such that each transmitter emits a wave towards both the analysis zone and a respective receiver of the array of receivers.

Provided are methods, systems, and computer program products for a LiDAR with an increased dynamic range. The method includes filtering output pulses of an SiPM device to a substantially symmetric pulse shape and capturing timing information and intensity information of the filtered output pulses for at least one predetermined intensity level. The method includes monitoring saturation of the SiPM device, wherein a width of a saturation plateau of a respective output pulse is determined in response to saturation of the SiPM device. The method also includes extrapolating additional timing information and additional intensity information of the respective output pulse using the captured timing information, the captured intensity information, and the determined width of the saturation plateau.

The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.

In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

An optical sensing device includes a substrate; a light-sensing element disposed on the substrate; a light-shielding layer disposed on the light-sensing element, including a first opening overlapping the light-sensing element; an insulating layer disposed on the light-shielding layer, including a second opening overlapping the first opening; a light-shielding element disposed on a hole wall of the second opening; and a light-collecting element disposed on the insulating layer and overlapping the second opening.

A light sensing device including a first conductivity type buried layer, a second conductivity type well, and a first conductivity type well is provided. The second conductivity type well is on the first conductivity type buried layer. The first conductivity type well is on the second conductivity type well and surrounded by the second conductivity type well.

An occupancy sensor covering a wide field in an integrated chip is disclosed. The occupancy sensor includes an array of grating coupled waveguide sensors wherein continuous wave (cw) signals monitor an ambient light field for dynamic changes on times scales of seconds, and high frequency signals map in three-dimensions of the space using time-of-flight (TOF) measurements, pixel level electronics that perform signal processing; array level electronics that perform additional signal processing; and communications and site level electronics that interface with actuators to respond to occupancy sensing.