Methods and apparatus for extracting temperature information for an array from a signal through first and second contacts based on temperature dependent properties of the a PN junction. An example method includes connecting first and second PN junctions to a bias source to reverse bias the first and second PN junctions, connecting a first contact to the first PN junction, connecting a second contact to N type material forming a junction with P type material of the first PN junction, and extracting temperature information for the first PN junction from a signal through the first and second contacts based on temperature dependent properties of the first PN junction.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

There is set forth herein a device comprising: a detector surface for supporting biological or chemical samples; an array of doped areas formed in a semiconductor formation, wherein the semiconductor formation receives excitation light and emission light from the detector surface, and wherein doped areas of the array of doped areas define photodiodes; a doped region formed in the semiconductor formation in a receive light path of the excitation light and emission light intermediate the detector surface and a doped area of the array of doped areas; and wherein the doped region is configured to impact a travel direction of electrons generated in the doped region as a result of photon absorption.

A detection device includes a photoelectric conversion portion in which a plurality of photodiodes are arranged in a planar shape, a light source configured to irradiate the photodiodes with light, and a heating electrode provided so as to face the photoelectric conversion portion, and configured to generate heat and conduct the heat to the photoelectric conversion portion.

A device may include: a highly doped n.sup.+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n.sup.+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p.sup.− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p.sup.− Si charge region having a thickness of about 40-60 nm; and a p.sup.+ Ge absorption region disposed on at least a portion of the p.sup.− Si charge region; wherein the p.sup.+ Ge absorption region is doped across its entire thickness. The thickness of the n.sup.+ Si region may be about 100 nm and the thickness of the p.sup.− Si charge region may be about 50 nm. The p.sup.+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.

A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

According to one embodiment, a light receiving device, includes pixel regions, each comprising a photoelectric transducer. Each photoelectric transducer is connected to a quenching resistor. A deep trench isolation structure surrounds and separates each pixel region. A plurality of shallow trench isolation portions is in the light receiving device. Each shallow trench isolation portion is below a quenching resistor and on a portion the deep trench isolation structure.

A hybrid neuromorphic computing device is provided, in which artificial neurons include light-emitting devices that provide weighted sums of inputs as light output. The output is detected by a photodetector and converted to an electrical output. Each neuron may receive output from one or more other neurons as initial input, allowing for high degrees of fan-out and fan-in, including true broadcast-to-all functionality.

A wafer includes a substrate layer, a first mirror layer having a plurality of two-dimensionally arranged first mirror portions, and a second mirror layer having a plurality of two-dimensionally arranged second mirror portions. In the wafer, a gap is formed between the first mirror portion and the second mirror portion so as to form a plurality of Fabry-Perot interference filter portions. A wafer inspection method according to an embodiment includes a step of performing faulty/non-faulty determination of each of the plurality of Fabry-Perot interference filter portions, and a step of applying ink to at least part of a portion overlapping the gap when viewed in a facing direction on the second mirror layer of the Fabry-Perot interference filter portion determined as faulty.

An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.