A cost effective multicolor sensor and related software achieves a spectral response that closely approximates an ideal photo response to measure optical measurement, for example photosynthetic photo flux density (PPFD). The spectra error of the sensor is smaller than that of the best commercially available sensor at a significantly reduced cost. The sensor may include an 8×2 array of filtered photodiodes and spectral photo sensors that are linearly combined with the appropriate mathematically determined coefficients to create a corrected spectral response curve that has a spectral error much smaller than the best commercial available sensors made by physical coating methods for the entire desired range.

Photosensitive logic inverter, in particular of the CMOS type, formed of a transistor of type P and of a transistor of type N of which the respective threshold voltages can be modulated according to the quantity of photons received by a photosensitive zone provided opposite these transistors.

The present disclosure relates to systems and methods that include a monolithic, single-chip receiver. An example system includes a plurality of macropixels, each made up of an array of single photon avalanche diodes (SPADs). The system also includes a plurality of pipelined adders communicatively coupled to a respective portion of the plurality of macropixels. The system additionally includes a controller configured to carry out operations. The operations include during a listening period, receiving, at each pipelined adder of the plurality of pipelined adders, respective photosignals from the respective portion of the plurality of macropixels. The operations also include causing each pipelined adder of the plurality of pipelined adders to provide an output that includes a series of frames that provide an average number of SPADs of the respective portion of the plurality of macropixels that were triggered during a given listening period.

An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

A display comprises a plurality of autonomous pixels on a stretchable substrate. Each autonomous pixel comprises a display element and a control element arranged to sense an external stimulus and to generate, entirely within the autonomous pixel, a control signal to drive the display element based, at least in part, on a magnitude of the sensed external stimulus. The stretchable substrate comprises a plurality of less elastic regions separated by stretchable areas, where the less elastic regions are less stretchable than the surrounding stretchable areas and each control element of an autonomous pixel is located in or on a less elastic region of the stretchable substrate.

The method comprises the steps of providing a semiconductor device comprising a semiconductor layer (1) with at least one radiation sensor (6) and a dielectric layer (2), arranging a web (3) comprising a plurality of recesses (4) on the dielectric layer, and introducing ink of different colors (A, B, C) in the recesses by inkjets (I).

A photodetection element includes a semiconductor substrate having a principal surface on which detection target light is incident and a rear surface, and including one or a plurality of photodetection regions on the principal surface side, and a light absorption film provided on the rear surface. The light absorption film includes a reflection layer being a metal layer, a resonance layer provided between the reflection layer and the substrate, and a light absorption layer provided between the resonance layer and the substrate. In at least one of a wavelength of the detection target light and a wavelength of spontaneous light, a light transmittance inside the resonance layer is larger than a light transmittance inside the light absorption layer, and a light reflectance on a surface of the reflection layer is larger than a light reflectance on a surface of the resonance layer.

A radiographic image capturing device includes: plural radiation dose detection pixels that respectively output signal values according to a dose of irradiated radiation; a determination unit that determines a presence or absence of defects, block-by-block, based on signal values of radiation dose detection pixels included in each of plural blocks, which are arranged such that the respective blocks include at least a portion of the plural radiation dose detection pixels; a block rearrangement unit that performs block rearrangement to change the arrangement of the plural blocks according to a determination result of the determination unit; and a detection unit that detects a dose of irradiated radiation based on signal values of each arranged block or of each rearranged block.

A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d.sub.1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.