An object of the present disclosure is to provide a solid-state imaging device capable of suppressing deterioration of image quality. The solid-state imaging device includes: a first pixel that has a plurality of photoelectric conversion units sharing a first color filter with each other and a plurality of on-chip lenses; a second pixel that is arranged adjacent to the first pixel and has a plurality of photoelectric conversion units sharing a second color filter with each other and a plurality of on-chip lenses; and a first light shielding region that is provided between the first pixel and the second pixel.

The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity._A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity._A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

Provided are a coloring composition including a colorant, a first resin including a repeating unit represented by Formula (b-10), and a second resin different from the first resin, in which the second resin is at least one selected from a polyimide precursor, a polyimide resin, a polybenzoxazole precursor, a polybenzoxazole resin, or a polysiloxane resin; a film formed of the coloring composition; an optical filter; a solid-state imaging element; and an image display device. In Formula (b-10), Ar.sup.10 represents a group including an aromatic carboxyl group, L.sup.11 represents —COO— or —CONH—, L.sup.12 represents a trivalent linking group, and P.sup.10 represents a polymer chain.

##STR00001##

The present invention provides a method of forming a metal grid, a backside illuminated (BSI) image sensor, and a method of forming the BSI image sensor. In the methods, an etch stop layer and a metal material layer are successively deposited in geometric conformity over a substrate already formed therein with a recess and a conductive pillar, followed by the formation of a bonding pad on the metal material layer in the recess. After that, a dielectric cap layer is deposited and etched together with the metal material layer and the etch stop layer to form the metal grid. According to the present invention, the deposited metal material layer has reduced surface roughness, which results in improved thickness uniformity of the resulting metal grid. The metal grid is overall easier to form, resulting in savings in cost and increased performance of the device being fabricated.

A flat panel detector and an imaging system are provided. The flat panel detector includes a plurality of pixel units which include photosensitive pixel units and alignment pixel units. Each photosensitive pixel unit includes a photoelectric sensor configured to convert an incident light into an electrical signal so that a photosensitive pixel unit in which the photoelectric sensor is located has a grayscale that changes according to a real-time change of the incident light. Each alignment pixel unit is configured to have a fixed grayscale, and the fixed grayscale does not change according to the real-time change of the incident light. The alignment pixel units includes first alignment pixel units and second alignment pixel units. Each first alignment pixel unit has a first fixed grayscale, each second alignment pixel unit has a second fixed grayscale different from the first fixed grayscale.

A flat panel detector and an imaging system are provided. The flat panel detector includes a plurality of pixel units which include photosensitive pixel units and alignment pixel units. Each photosensitive pixel unit includes a photoelectric sensor configured to convert an incident light into an electrical signal so that a photosensitive pixel unit in which the photoelectric sensor is located has a grayscale that changes according to a real-time change of the incident light. Each alignment pixel unit is configured to have a fixed grayscale, and the fixed grayscale does not change according to the real-time change of the incident light. The alignment pixel units includes first alignment pixel units and second alignment pixel units. Each first alignment pixel unit has a first fixed grayscale, each second alignment pixel unit has a second fixed grayscale different from the first fixed grayscale.

Structures for a photonics chip that include a fully-depleted silicon-on-insulator field-effect transistor and related methods. A first device region of a substrate includes a first device layer, a first portion of a second device layer, and a buried insulator layer separating the first device layer from the first portion of the second device layer. A second device region of the substrate includes a second portion of the second device layer. The first device layer, which has a thickness in a range of about 4 to about 20 nanometers, transitions in elevation to the second portion of the second device layer with a step height equal to a sum of the thicknesses of the first device layer and the buried insulator layer. A field-effect transistor includes a gate electrode on the top surface of the first device layer. An optical component includes the second portion of the second device layer.

An image sensing device includes a pixel array configured to include a plurality of pixel groups arranged in a matrix structure. Each of the pixel groups includes an optical filter configured to selectively pass incident light, a plurality of photoelectric conversion regions disposed below the optical filter and arranged in a matrix structure, a first isolation structure disposed between the photoelectric conversion regions and other pixel groups, a plurality of second isolation structures disposed between two adjacent photoelectric conversion regions from among the photoelectric conversion regions, and a third isolation structure disposed between the second isolation structures, and configured to interconnect the second isolation structures. The third isolation structure includes a cavity region formed adjacent to contact any one of the photoelectric conversion regions.

Disclosed is a SPAD pixel for a backside illuminated image sensor. More particularly, the SPAD pixel may improve sensitivity to long wavelengths by maximizing the depth of a PN junction in an epitaxial layer in the SPAD substrate.