Provided are a composition for an organic optoelectronic device including a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2, an organic optoelectronic device including the same, and a display device. Details of Chemical Formula 1 and Chemical Formula 2 are as defined in the specification.

Provided are a display substrate, a preparation method thereof, and a display apparatus. A portion of a pixel definition layer that is in contact with a light-emitting functional layer is configured to have the performance of switching between hydrophilicity and hydrophobicity when an external condition changes. When film layers of the light-emitting functional layer are formed, due to the inconsistent hydrophilicity or hydrophobicity of the film layers of the light-emitting functional layer, when a hydrophilic light-emitting functional layer is formed, the pixel definition layer switches, under processing via the external condition, the portion of the pixel definition layer that is in contact with the light-emitting functional layer to be hydrophobic, and when a hydrophobic light-emitting functional layer is formed, the pixel definition layer switches, under processing via the external condition, the portion of the pixel definition layer that is in contact with the light-emitting functional layer to be hydrophilic.

A light emitting device includes: a first electrode; a second electrode overlapping the first electrode; m light emitting units between the first electrode and the second electrode; and m-1 charge generating layers between adjacent light emitting units, wherein the charge generating layer includes: an n-type charge generating layer and a p-type charge generating layer; at least one of a plurality of n-type charge generating layers includes a dopant including an alkali metal, and at least one of a plurality of n-type charge generating layers includes a dopant including a lanthanum metal; contents of the alkali metal and the lanthanum metal doped in the n-type charge generating layer are different from each other; and the m is a natural number of greater than or equal to 3.

In a semiconductor device, a semiconductor substrate has an IGBT region and a FWD, and includes a first conductivity type drift layer, a second conductivity type base layer disposed on the drift layer, a second conductivity type collector layer disposed opposite to the base layer with respect to the drift layer in the IGBT region, and a first conductivity type cathode layer disposed opposite to the base layer with respect to the drift layer in the FWD region. The collector layer includes an extension portion that covers only a part of the cathode layer on a side adjacent to the drift layer. Alternatively, the collector layer includes an extension portion that entirely covers a region of the cathode layer adjacent to the drift layer, and has an area density of 3.5×10.sup.12 cm.sup.−2 or less.

Disclosed are a display substrate and a display device. The display substrate includes a plurality of sub-pixels. The density of sub-pixels of a first display region is less than that of a second display region; the plurality of sub-pixels includes a plurality of first pixel groups and a plurality of second pixel groups, the plurality of first pixel groups are located in the first display region, the plurality of second pixel groups are located in the second display region, the first display region includes a plurality of sub-display regions and a sub-light-transmitting region, each of the first pixel groups includes a first sub-pixel, a second sub-pixel, and a third sub-pixel, each of the second pixel groups includes a first sub-pixel, a second sub-pixel pair, and a third sub-pixel arranged along a first direction, and the second sub-pixel pair includes two second sub-pixels arranged along a second direction.

A light-emitting diode and a preparation method of the light-emitting diode are provided in the present application. The light-emitting diode includes an anode and a cathode which are arranged opposite to each other, a luminescent layer arranged between the anode and the cathode, an electron transport layer arranged between the cathode and the luminescent layer, and a composite film arranged between the cathode and the electron transport layer. Where the composite film includes an aluminum oxide film arranged adjacent to the electron transport layer, and a nano metal oxide film or a silicon nitride film arranged away from the electron transport layer. The light-emitting diode according to the present application may block water and oxygen from infiltrating into it effectively, so that a poor stability of the light-emitting diode device in a water-oxygen environment is improved.

Provided is a semiconductor device including: a buffer region having a doping concentration higher than a bulk donor concentration; a first low-concentration hydrogen peak in the buffer region; a second low-concentration hydrogen peak in the buffer region closer to a lower surface than the first low-concentration hydrogen peak; a high-concentration hydrogen peak in the buffer region closer to the lower surface than the second low-concentration hydrogen peak, the high-concentration hydrogen peak having a hydrogen chemical concentration higher than that of the second low-concentration hydrogen peak; and a flat region including a region between the two low-concentration hydrogen peaks and a region including the second low-concentration hydrogen peak, and having a doping concentration higher than a bulk donor concentration, an average value of the doping concentration being equal to or smaller than a local minimum value of a doping concentration between the second low-concentration hydrogen peak and the high-concentration hydrogen peak.

Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having a higher doping concentration than the drift region. The buffer region has two or more helium chemical concentration peaks arranged at different positions in a depth direction of the semiconductor substrate.

An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX.sub.3, A.sub.2BX.sub.4, A.sub.3BX.sub.5, A.sub.4BX.sub.6, ABX.sub.4, or A.sub.n−1B.sub.nX.sub.3n+1, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.

A display panel having a base substrate, a light emitting layer on a side of the base substrate, and a wavelength converting layer on a side of light emitting layer away from the base substrate is provided.The light emitting layer includes light emitting units and a first pixel defining layer defining the plurality of light emitting units, the wavelength converting layer includes wavelength converting units and a second pixel defining layer defining the wavelength converting units, each of the of wavelength converting units converts a wavelength of a light emitted by at least one of the light emitting units, wherein in a direction perpendicular to the base substrate, the second pixel defining layer has a thickness twice or more that of the first pixel defining layer. A method for manufacturing the display panel and a display device are also provided.