An exemplary wafer structure comprises a source wafer having a patterned sacrificial layer defining anchor portions separating sacrificial portions. A patterned device layer is disposed on or over the patterned sacrificial layer, forming a device anchor on each of the anchor portions. One or more devices are disposed in the patterned device layer, each device disposed entirely over a corresponding one of the one or more sacrificial portions and spatially separated from the one or more device anchors. A tether structure connects each device to a device anchor. The tether structure comprises a tether device portion disposed on or over the device, a tether anchor portion disposed on or over the device anchor, and a tether connecting the tether device portion to the tether anchor portion. The tether is disposed at least partly in the patterned device layer between the device and the device anchor.

A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

An electroluminescent display device and a fabricating method thereof are provided. The device has a TFT layer, a first functional layer, an electroluminescent layer, a second functional layer, and a functional bar disposed sequentially. The device uses Seebeck effect of constituent material of p-type Bi.sub.2Te.sub.3 of the functional bar to absorb heat of the TFT layer for converting the heat into electric energy, thereby effectively reducing heat of the TFT layer, reducing aging of circuit and organic material, and improving life of the electroluminescent display device. A work function of p-type Bi.sub.2Te.sub.3 material of the functional bar is 5.3 eV. An electroluminescent material has a HOMO energy level ranging from 5 to 6 eV. Under a driving of a thermoelectromotive force, majority carriers (holes) in the constituent material of p-type Bi.sub.2Te.sub.3, are injected into the electroluminescent layer to improve a carrier concentration therein, thereby improving emission luminance of the electroluminescent display device.

A small projector uses an ultra-dense array of gallium nitride (GaN) LEDs. However, epitaxial growth of GaN typically produces a GaN region that is Sum or thicker. To achieve high pixel density, the LEDs have small area, so the resulting LED structures are tall and skinny. This is undesirable because it makes further processing more difficult and has higher optical losses. As a result, it is beneficial to reduce the thickness of the GaN region. In one approach, a wafer with the GaN region on substrate is bonded to a backplane wafer containing LED driver circuits. The substrate is then separated from the GaN region, exposing a buffer layer of the GaN region. The GaN region is thinned and then patterned into individual LEDs. Typically, the buffer layer is removed entirely.

A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

A fabric-based item may include fabric layers and other layers of material. An array of electrical components may be mounted in the fabric-based item. The electrical components may be mounted to a support structure such as a flexible printed circuit. The flexible printed circuit may have a mesh shape formed from an array of openings. Serpentine flexible printed circuit segments may extend between the openings. The electrical components may be light-emitting diodes or other electrical devices. Polymer with light-scattering particles or other materials may cover the electrical components. The flexible printed circuit may be laminated between fabric layers or other layers of material in the fabric-based item.

A display device including a plurality of vertical type semiconductor light-emitting diodes; a plurality of horizontal type semiconductor light-emitting diodes; a first wiring formed on a substrate and including a plurality of electrode lines, a first electrode line being connected with first conductive electrodes of the vertical type semiconductor light-emitting diodes and a second electrode line being connected with first conductive electrodes of the horizontal type semiconductor light-emitting diodes; a second wiring spaced apart from and crossing the first wiring and electrically connected with second conductive electrodes of the vertical type semiconductor light-emitting diodes; and a third wiring formed on the substrate, electrically connected with the second wiring, and connected with second conductive electrodes of the horizontal type semiconductor light-emitting diodes.

The present disclosure discloses a flexible display panel and a flexible display. The flexible display panel includes a flexible substrate with at least one bendable side, the flexible substrate comprises a display area and a drive controller, the flexible display panel of the present disclosure adjusts the aspect ratio by changing the structure of the drive controller, thereby shortening the length of the drive controller along the direction parallel to the bend line in the bend area, effectively avoiding defects of the structure of the drive controller on the flexible display panel, also increasing the viewing angle. In addition, in order to save the space, the flexible substrate connected to the drive controller is bent to the other side of the flexible substrate to make the drive controller drive the light emission of the display panel, which greatly reduces the volume of the flexible panel.

Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.