According to at least one aspect, a lighting device is provided. The lighting device comprises a circuit board; a light emitting diode (LED) array mounted to the circuit board and configured to emit broad spectrum light at any one of a plurality of different color correlated temperature (CCT) values within a range of CCT values, the LED array comprising a first LED configured to emit narrow spectrum light and a second LED that is different from the first LED and configured to emit broad spectrum light; and at least one elastomer encapsulating at least part of the circuit board and the LED array mounted to the circuit board.

A substrate structure with a buried chip and a light emitting device using the same are provided. The substrate structure includes a base layer, a control chip, a filling layer, a first upper resin layer and a first lower resin layer. The substrate layer has a first surface, a second surface opposite to the first surface, and an opening passing through the first surface and the second surface. The control chip is disposed in the opening, and an annular space having a specific width is defined by an outer wall surface of the control chip and an inner wall surface of the opening. The filling layer is filled in the annular space. The first upper resin layer and the first lower resin layer are respectively disposed on the first surface and the second surface of the base layer.

Provided are an OLED display substrate (100) and an OLED display device, in the field of display device. The OLED display substrate (100) includes a plurality of pixels, and each of the pixels includes two sub-pixels. The two sub-pixels include a first sub-pixel (210) and a second sub-pixel (220). The first sub-pixel (210) includes a first light-emitting unit (211) and a second light-emitting unit (212) that are stacked; the second sub-pixel (220) includes a third light-emitting unit (213); and the first light-emitting unit (211), the second light-emitting unit (212) and the third light-emitting unit (213) are configured to emit lights with different colors. Under the same resolution, the aperture ratio of the OLED display substrate (100) may be increased. Alternatively, under the same size of sub-pixels, the resolution of the OLED display substrate (100) may be increased. Therefore, the brightness uniformity and display effect of the OLED display panel are improved.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

A display apparatus includes a first substrate including an active area, a circuit area extending outwardly from the active area, and a cell seal area extending outwardly from the circuit area, a second substrate covering the first substrate, a sealing portion between the first substrate and the second substrate, the sealing portion covering at least a portion of the circuit area, a circuit line in the circuit area of the first substrate and electrically connected to a device in the active area of the first substrate, at least a portion of the sealing portion being on the circuit line, and a pixel definition layer between the sealing portion and the circuit line.

A semiconductor structure is disclosed. The semiconductor structure includes: a first light-emitting diode (LED) layer including a first LED of a first color type, the first LED layer having a first side and a second side opposite to the first side; a second LED layer over the first LED layer, the second LED layer including a second LED of a second color type, and the second LED layer having a first side and a second side opposite to the first side; and a third LED layer over the second LED layer, the third LED layer including a third LED of a third color type, and the third LED layer having a first side and a second side opposite to the first side; wherein the first color type, the second color type, and the third color type are different from each other.

A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes providing a light emitting diode chip with a growth substrate and with a semiconductor layer sequence for generating radiation, soldering chip contact surfaces located on a chip underside of the semiconductor layer sequence facing away from the growth substrate to carrier contact surfaces of a carrier, applying a liquid connector transparent to the radiation to a substrate upper side of the growth substrate facing away from the semiconductor layer sequence, fastening a fluorescent body to the substrate upper side, the connector being partially displaced by the fluorescent body from the substrate upper side so that chip side faces are predominantly covered by the connector and generating a reflector on outer faces of the connector facing away from the light emitting diode chip on the chip side faces, the outer faces pointing in a direction away from the carrier.

The present disclosure provides an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm, and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm, and the ultra-high color rendering white light-emitting device has Ra that is equal to or higher than 98 and less than 100.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.