Pixelated-LED chips and related methods are disclosed. A pixelated-LED chip includes an active layer with independently electrically accessible active layer portions arranged on or over a light-transmissive substrate. The active layer portions are configured to illuminate different light-transmissive substrate portions to form pixels. Various enhancements may beneficially provide increased contrast (i.e., reduced cross-talk between pixels) and/or promote inter-pixel illumination homogeneity, without unduly restricting light utilization efficiency. In some aspects, an underfill material with improved surface coverage is provided between adjacent pixels of a pixelated-LED chip. The underfill material may be arranged to cover all lateral surfaces between the adjacent pixels. In some aspects, discontinuous substrate portions are formed before application of underfill materials. In some aspects, a wetting layer is provided to improve wicking or flow of underfill materials during various fabrication steps. Other technical benefits may additionally or alternatively be achieved.

Pixelated-LED chips and related methods are disclosed. A pixelated-LED chip includes an active layer with independently electrically accessible active layer portions arranged on or over a light-transmissive substrate. The active layer portions are configured to illuminate different light-transmissive substrate portions to form pixels. Various enhancements may beneficially provide increased contrast (i.e., reduced cross-talk between pixels) and/or promote inter-pixel illumination homogeneity, without unduly restricting light utilization efficiency. In some aspects, an underfill material with improved surface coverage is provided between adjacent pixels of a pixelated-LED chip. The underfill material may be arranged to cover all lateral surfaces between the adjacent pixels. In some aspects, discontinuous substrate portions are formed before application of underfill materials. In some aspects, a wetting layer is provided to improve wicking or flow of underfill materials during various fabrication steps. Other technical benefits may additionally or alternatively be achieved.

Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.

Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.

A LED display device is provided in the present disclosure, including multiple pixel units arranged in array on the substrate. Each of the pixel units includes three LEDs with different emitting colors. In each row of the pixel units, a first electrode of each LED is connected directly with a lateral through line. In each column of the pixel units, a second electrode of a red LED is electrically connected with a first vertical through line via a first via hole, a second electrode of a green LED is electrically connected with a second vertical through line via a second via hole, and a second electrode of a blue LED is electrically connected with a second vertical through line via a third via hole.

In a SiC-MOSFET, to increase the threshold voltage while reducing the channel resistance is difficult. And, when the channel resistance is lowered, the reliability may be reduced in such a manner that a current may flow when the device is turned off and malfunction may occur when the device is used as a normally-off device. According to the present invention, the threshold voltage is increased while the channel resistance is reduced, and reliability when used as a normally-off device is improved by adding at least any of sulfur, selenium, and tellurium to the channel region of the SiC MOSFET.

In a SiC-MOSFET, to increase the threshold voltage while reducing the channel resistance is difficult. And, when the channel resistance is lowered, the reliability may be reduced in such a manner that a current may flow when the device is turned off and malfunction may occur when the device is used as a normally-off device. According to the present invention, the threshold voltage is increased while the channel resistance is reduced, and reliability when used as a normally-off device is improved by adding at least any of sulfur, selenium, and tellurium to the channel region of the SiC MOSFET.

A light emitting device includes a plurality of light emitting elements and a package. The package includes two metal parts on which the plurality of light emitting elements are disposed, and a resin body securing the two metal parts. The resin body has four sides and four connecting parts alternately connected to one another in a top view. Two subsequent sides are perpendicular to each other. Each of the two metal parts includes a die-pad on which one or more of the plurality of light emitting elements are disposed, and two extending portions extending from the die-pad. An end portion of each of the two extending portions is extended laterally outward from a respective one of the connecting parts of the resin body, and the end portion of each of the two extending portions is located inward of virtual extension lines of corresponding two sides of the resin body.

Provided are a micro LED and a method for manufacturing the same. When the micro LED is manufactured, an n-electrode and a protective layer formed on the micro LED is made of a variable resistance material that is a transparent material, and a voltage greater than a unique threshold voltage of the variable resistance material is applied to the variable resistance material on an area of the protective layer formed on the p-type semiconductor layer to form a conductive filament in the variable resistance material, thereby forming a transparent electrode. Thus, the micro LED according to the present invention may be produced with lower cost and higher productivity by omitting the mask process for forming the transparent electrode in the prior art.

A display panel includes a substrate including an opening area and a display area surrounding the opening area, a plurality of display elements in the display area, and a groove arranged between the opening area and the display area, and including a first protruding tip and a second protruding tip having different heights from an upper surface of the substrate and spaced apart from each other, where the first protruding tip and the second protruding tip protrude from a side of the groove toward an inside of the groove.