The perovskite solar cell (PSC) includes a first layer containing a conducting material coated glass plate as a substrate, a second layer containing copper doped nickel oxide, a third layer containing a perovskite, a fourth layer containing nitrogen (N)-doped graphene quantum dots, a fifth layer containing phenyl-C61-butyric acid methyl ester and a top layer including conductive layer. A method for producing the perovskite solar cell is also discussed.

The perovskite solar cell (PSC) includes a first layer containing a conducting material coated glass plate as a substrate, a second layer containing copper doped nickel oxide, a third layer containing a perovskite, a fourth layer containing nitrogen (N)-doped graphene quantum dots, a fifth layer containing phenyl-C61-butyric acid methyl ester and a top layer including conductive layer. A method for producing the perovskite solar cell is also discussed.

A graphene semiconductor design method according to the present invention, designs a semiconductor of graphene material by adjusting w and an effective permittivity _eff of a plasmon medium by use of a resonator, and integrates graphene semiconductor by adjusting a feed direction of a plasmon medium to generate a meta substance and a surface plasmon resonance phenomenon.

A semiconductor device according to an embodiment includes a SiC layer, an electrode electrically connected to the SiC layer and an impurity region provided between the SiC layer and the electrode. The impurity region includes first position and second position, the first position having highest concentration of an impurity in the impurity region, the highest concentration being not lower than 110.sup.20 cm.sup.3 and not higher than 510.sup.22 cm.sup.3, the second position having concentration of the impurity one digit lower than the highest concentration, the first position being between the electrode and the second position, a distance between the first position and the second position being 50 nm or shorter.

The perovskite solar cell (PSC) includes a first layer containing a conducting material coated glass plate as a substrate, a second layer containing copper doped nickel oxide, a third layer containing a perovskite, a fourth layer containing nitrogen (N)-doped graphene quantum dots, a fifth layer containing phenyl-C61-butyric acid methyl ester and a top layer including conductive layer. A method for producing the perovskite solar cell is also discussed.

A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

A semiconductor device according to an embodiment includes a SiC layer, an electrode electrically connected to the SiC layer and an impurity region provided between the SiC layer and the electrode. The impurity region includes first position and second position, the first position having highest concentration of an impurity in the impurity region, the highest concentration being not lower than 110.sup.20 cm.sup.3 and not higher than 510.sup.22 cm.sup.3, the second position having concentration of the impurity one digit lower than the highest concentration, the first position being between the electrode and the second position, a distance between the first position and the second position being 50 nm or shorter.

Disclosed is a nanofilm, a thin film transistor and manufacture methods thereof. The nanofilm of the present disclosure comprises a plurality of regions distributed in a film plane dimension, wherein each of the regions is composed of one kind of nanomaterial, and nanomaterials of adjacent regions are different from each other and contact with each other to form a heterojunction or a Schottky junction.

A detection device detects the presence of a chemical or biological agent in an environment. The detection device includes a metal layer including a plurality of electrodes. The device further includes a graphene layer covering a surface of the metal layer of electrodes and a detection layer connected to the electrodes. Contact of a biological or chemical agent with a surface of the graphene layer causes a change in resistance of the graphene layer. The detection layer includes detection circuitry configured to detect the change in resistance as a function of a measured change in a current or voltage between adjacent electrodes.

A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.