The present disclosure provides a photodiode, a manufacturing method thereof, and a display screen. The photodiode includes: a first electrode including a first sub-part and a second sub-part disposed at an interval, wherein the second sub-part includes a first end and a second end; a connecting part disposed on the first sub-part, the first end, and a substrate corresponding to a gap between the first sub-part and the second sub-part; and a light converting part and a second electrode disposed on the second end in sequence.

A photodetector designing method includes, according to various requirements required by an application equipped with a photodetector including a photoelectric conversion layer having a superlattice structure mostly composed of amorphous selenium, a step of determining a form of the photodetector; a step of determining a type of a substrate suitable for a wavelength to be detected by the photoelectric conversion layer among the requirements, a step of calculating a multiplication factor M representing an amplification gain generated in a process of tunneling in the superlattice structure, and a step of determining, as a layer thickness of the photoelectric conversion layer, a thickness obtained by multiplying a thickness per one layer of the superlattice structure by the number of layers N.sub.SL of the superlattice structure on the assumption that the multiplication factor M is approximate to the number of layers N.sub.SL.

Provided is a conductive material that is capable of achieving a high-electric conductivity, long-term stability under an atmospheric environment, heat and high humidity stabilities, as well as a conductive film and a solar cell using the same. The conductive material includes a mixture of carbon nanotubes (CNTs) and polystyrene sulfonic acid (PSS acid). The element ratio (S/C ratio) of sulfur (S) to carbon (C) in the mixture may be from 0.001 to 0.1 in terms of the number of atoms. CNTs and PSS acid may make up a content percentage of 10 wt % or more in the mixture. These conductive films comprised of the conductive material 6 may have a weight per unit area of the CNTs in the range from 1 mg/m.sup.2 to 10000 mg/m.sup.2. The solar cell may include the conductive film 7, wherein the film is on the surface of a semiconductor.

A solar cell is described that comprises a transparent conductor sheet having a polymeric substrate with an embedded metal grid, disposed within microchannels extending partially through a thickness of polymeric substrate from a first surface of the polymeric substrate; and a photoactive layer disposed adjacent to the first surface of the polymeric substrate. The transparent conductor sheet has a sheet resistance less than 1 Ω/□ and an average solar direct transmittance over the visible and infrared portion of the spectrum of at least about 80%.

A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first photoelectric conversion layer, and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second photoelectric conversion layer, and a second counter electrode; and a connection including a groove, a conductive portion and a conductive layer, the conductive portion being provided in the groove and including a part of the first counter electrode, and the conductive portion and the conductive layer electrically connecting the first counter electrode and the second substrate electrode. The conductive layer overlaps the first counter electrode on an edge of the groove, and a total thickness of the conductive portion and the conductive layer is larger than a thickness of the first counter electrode.

A solar cell comprising a semiconductor substrate, first semiconductor layers, second semiconductor layers, a band-like first base electrode stacked on the first semiconductor layer, a band-like second base electrode stacked on the second semiconductor layer, a first electrode insulation stacked on the first base electrodes, a second electrode insulation stacked on the second base electrodes, an intermediate insulation stacked on a region of the first semiconductor layer in which the first base electrode is not stacked, and a region of the second semiconductor layer in which the second base electrode is not stacked, a first current collector stacked to span the second electrode insulation and the intermediate insulation, and a second current collector stacked to span the first electrode insulation and the intermediate insulation.

This application provides a solar cell, including a front electrode, a functional layer, and a back electrode. The front electrode is an electrode on a side of an illuminated surface. The front electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other, or the back electrode includes a high-conductivity region and a low-conductivity region that are adjacent to each other. The front electrode and/or the back electrode may be designed to be separated by region, and conductivity of one conductive region is designed to be higher than conductivity of the other conductive region. This can effectively avoid a film rectangular resistance loss caused by large-scale non-uniform lateral transfer of a photocurrent, and improve photoelectric conversion efficiency of the cell. In addition, cell comprehensive performance can be improved by flexibly selecting materials based on different requirements of different regions in different application scenarios.

A photoelectric conversion element for detecting the spot size of incident light, including a photoelectric conversion substrate provided with two main surfaces, and multiple first sensitivity sections and second sensitivity sections arranged in a prescribed direction. When sensitivity regions on the respective main surfaces of the multiple first sensitivity sections are defined as first sensitivity regions, and sensitivity regions that appear on the main surfaces of the second sensitivity sections are defined as second sensitivity regions, each of the first sensitivity regions receives at least a part of light incident on the main surfaces, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity regions in the irradiation region with respect to the first sensitivity regions other than those in the irradiation region and the second sensitivity regions is decreased.

Separation of individual strips from a solar cell workpiece, is accomplished by excluding a junction (e.g., a homojunction such as a p-n junction, or a heterojunction such as a p-i-n junction) from regions at which separation is expected to occur. According to some embodiments, the junction is excluded by physical removal of material from inter-strip regions of the workpiece. According to other embodiments, exclusion of the junction is achieved by changing an effective doping level (e.g., counter-doping, deactivation) at inter-strip regions. For still other embodiments, the junction is never formed at inter-strip regions in the first place (e.g., using masking during original dopant introduction). By imposing distance between the junction and defects arising from separation processes (e.g., backside crack propagation), losses attributable to electron-hole recombination at such defects are reduced, and collection efficiency of shingled modules is enhanced.

Photovoltaic devices and methods for fabricating a photovoltaic devices. The method includes applying a coating layer that surrounds each of a plurality of silicon particles. The method also includes implanting the plurality of silicon particles into a substrate layer such that an exposed portion of each of the plurality of silicon particles extends away from a surface of the substrate layer. The method further includes removing a portion of the coating layer that is positioned around the exposed portion of each of the plurality of silicon particles. The method also includes placing an insulator layer on the surface of the substrate layer. The method further includes placing a selective carrier transport layer on the exposed portion of each of the plurality of silicon particles.