Provided are a lightweight solar power generation panel and a method of preparing the same. The lightweight solar power generation panel comprises a substrate, an insulating layer, a cell layer and a support layer which are stacked in sequence; a material of the substrate comprises any one or a combination of at least two of polypropylene, polyvinyl chloride, polyethylene, polymethyl methacrylate, polycarbonate, polystyrene or an acrylonitrile-butadiene-styrene copolymer. The low-density substrate material is used in the lightweight solar power generation panel provided by the present disclosure so that the entire solar power generation panel is lighter and portable.

Provided are a lightweight solar power generation panel and a method of preparing the same. The lightweight solar power generation panel comprises a substrate, an insulating layer, a cell layer and a support layer which are stacked in sequence; a material of the substrate comprises any one or a combination of at least two of polypropylene, polyvinyl chloride, polyethylene, polymethyl methacrylate, polycarbonate, polystyrene or an acrylonitrile-butadiene-styrene copolymer. The low-density substrate material is used in the lightweight solar power generation panel provided by the present disclosure so that the entire solar power generation panel is lighter and portable.

A sensing device including a substrate, a switching element, a sensing element and a common electrode is provided. The switching element is disposed on the substrate and includes a source electrode. The sensing element is disposed at one side of the switching element and includes a lower electrode, a photoelectric conversion layer and an upper electrode. The lower electrode is electrically connected to the source electrode. The photoelectric conversion layer is disposed on the lower electrode. The upper electrode is disposed on the photoelectric conversion layer. The common electrode is electrically connected to the upper electrode and belongs to the same film layer as the source electrode. A fabricating method of a sensing device is also provided.

A sensing device including a substrate, a switching element, a sensing element and a common electrode is provided. The switching element is disposed on the substrate and includes a source electrode. The sensing element is disposed at one side of the switching element and includes a lower electrode, a photoelectric conversion layer and an upper electrode. The lower electrode is electrically connected to the source electrode. The photoelectric conversion layer is disposed on the lower electrode. The upper electrode is disposed on the photoelectric conversion layer. The common electrode is electrically connected to the upper electrode and belongs to the same film layer as the source electrode. A fabricating method of a sensing device is also provided.

An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor 5 layer (3), and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor 5 layer (3), and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.

A solar electrical generator comprising an outer wall (1, 2) arranged to partially surround a cavity. A hub (3) is provided within the cavity wherein the outer face (4) of the wall is provided with solar cells (5). At least one of the hub (3) and the inner face (6) of the wall are provided with solar cells (5).

The present invention relates to photovoltaic lined optical cavity for a robust power generating apparatus consisting of said cavities and manufacturing methods for said cavities. The photovoltaic lined optical cavity comprises of an optical core, a base substrate, photovoltaic layers lining the optical core, and optical elements. The photovoltaic lined optical cavity is optimized for the light capture of solar radiation and sufficient integrity against mechanical loads.

Disclosed are a perovskite photoelectric device and a method of fabricating the same. A perovskite photoelectric device according to an embodiment of the present invention includes a first electrode; a hole transport layer formed on the first electrode; a perovskite layer formed on the hole transport layer and made of a first perovskite compound; an electron transport layer formed on the perovskite layer; a second electrode formed on the electron transport layer; and a graded wall formed on the hole transport layer and the perovskite layer and made of a second perovskite compound, wherein the first perovskite compound and the second perovskite compound are represented by Formula 1 below, and the graded wall suppresses movement of anions included in the perovskite layer:

A.sub.aM.sub.bX.sub.c  [Formula 1]

where A is a monovalent cation, M is a divalent or trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3B=c when M is a trivalent metal cation, and a, b and c are natural numbers.

Disclosed are a perovskite photoelectric device and a method of fabricating the same. A perovskite photoelectric device according to an embodiment of the present invention includes a first electrode; a hole transport layer formed on the first electrode; a perovskite layer formed on the hole transport layer and made of a first perovskite compound; an electron transport layer formed on the perovskite layer; a second electrode formed on the electron transport layer; and a graded wall formed on the hole transport layer and the perovskite layer and made of a second perovskite compound, wherein the first perovskite compound and the second perovskite compound are represented by Formula 1 below, and the graded wall suppresses movement of anions included in the perovskite layer:

A.sub.aM.sub.bX.sub.c  [Formula 1]

where A is a monovalent cation, M is a divalent or trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3B=c when M is a trivalent metal cation, and a, b and c are natural numbers.