The present disclosure provides methods of fabricating a multijunction solar cell panel in which one or more of the steps are performed using an automated process. In some embodiments, the automated process uses machine vision.

Provided are an image sensor and an imaging apparatus. The image sensor of a multi-layered sensor structure, the image sensor includes a plurality of sensing pixels, each of the plurality of sensing pixels including a micro lens configured to collect light, a first photoelectric converter configured to convert light of a first wavelength band into an electric signal, and a second photoelectric converter formed on a substrate configured to convert incident light into the electric signal, wherein a central axis of the second photoelectric converter is spaced apart from an optical axis of the micro lens.

Provided are an image sensor and an imaging apparatus. The image sensor of a multi-layered sensor structure, the image sensor includes a plurality of sensing pixels, each of the plurality of sensing pixels including a micro lens configured to collect light, a first photoelectric converter configured to convert light of a first wavelength band into an electric signal, and a second photoelectric converter formed on a substrate configured to convert incident light into the electric signal, wherein a central axis of the second photoelectric converter is spaced apart from an optical axis of the micro lens.

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

A spectrum-splitting concentrator photovoltaic (CPV) module utilizes direct fluid cooling of photovoltaic cells in which an array of photovoltaic cells is fully immersed in a flowing heat transfer fluid. Specifically, at least a portion of both the front face and the rear face of each photovoltaic cell comes into direct contact with heat transfer fluid, thereby enhancing coupling of waste heat out of the photovoltaic cells and into the heat transfer fluid. The CPV module is designed to maximize transmission of infrared light not absorbed by the photovoltaic cells, and therefore may be combined with a thermal receiver that captures the transmitted infrared light as part of a hybrid concentrator photovoltaic-thermal system.