Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.

Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.

A photovoltaic collector includes a photovoltaic cell including a first conduction layer, a second conduction layer, and a photovoltaic layer absorbing incident light and generating electric current. The photovoltaic layer is electrically connected to the first conduction layer on a first side of the photovoltaic layer and to the second conduction layer on a second side opposite to the first side. The first conduction layer is an ultrastatic conducting layer being made using ultrasonic spray technology. The photovoltaic collector further includes a plurality of connection units disposed along on an outer peripheral edge of the photovoltaic collector. Each connection unit is adapted to connect with an adjacent connection unit of an adjacent photovoltaic collector to tessellate and electrically interconnect and interlock the photovoltaic collector with a plurality of adjacent photovoltaic collectors without requiring additional cable wires.

Systems and methods of non-epitaxial high Schottky barriers heterojunction solar cells are described. The high Schottky barriers heterojunction solar cells are formed using non-epitaxial methods to reduce fabrication costs and improve scalability.

Systems and methods of non-epitaxial high Schottky barriers heterojunction solar cells are described. The high Schottky barriers heterojunction solar cells are formed using non-epitaxial methods to reduce fabrication costs and improve scalability.

The present invention provides an infrared photodetection device for detecting infrared radiation with a wavelength of 700 nm or larger comprising: a carrier transfer member comprised of a non-metallic material with a band gap; an absorber on one side of the carrier transfer member, and in electrical contact with the carrier transfer member, the absorber being a metallic material in which electron-hole pairs are excited upon absorption of infrared radiation; and a semiconductor on the other side of the carrier transfer member, and in electrical contact with the carrier transfer member; and wherein the carrier transfer member contains trap states such that majority carriers excited in the absorber due to infrared radiation are conducted via the trap states through the carrier transfer member to be collected b the semiconductor.

The present invention provides an infrared photodetection device for detecting infrared radiation with a wavelength of 700 nm or larger comprising: a carrier transfer member comprised of a non-metallic material with a band gap; an absorber on one side of the carrier transfer member, and in electrical contact with the carrier transfer member, the absorber being a metallic material in which electron-hole pairs are excited upon absorption of infrared radiation; and a semiconductor on the other side of the carrier transfer member, and in electrical contact with the carrier transfer member; and wherein the carrier transfer member contains trap states such that majority carriers excited in the absorber due to infrared radiation are conducted via the trap states through the carrier transfer member to be collected b the semiconductor.

Disclosed herein are CdSeTe photovoltaic devices having interdigitated back contact architecture for use in polycrystalline thin films in photovoltaic devices.

Disclosed herein is an inclined thin film solar cell. The inclined thin film solar cell includes a substrate including at least one first surface having a surface inclined at a first angle with respect to the bottom surface of the substrate and at least one second surface located adjacent to the first surface and having a surface which is connected to a next inclined surface and inclined at a second angle, a first electrode famed on a surface of the substrate, a light absorbing layer famed on the first electrode, and a second electrode formed on the light absorbing layer.

In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.