A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=∫qR(λ).Math.S(λ)dλ.Math.texp, G=∫qG(λ).Math.S(λ)dλ.Math.texp, B=∫qB(λ).Math.S(λ)dλ.Math.texp, wherein qR(λ), qG(λ), and qB(λ) are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S(λ) is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and λ designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least one of the parameters R, G, and B. The invention further relates to an image sensor application.

The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=∫qR(λ).Math.S(λ)dλ.Math.texp, G=∫qG(λ).Math.S(λ)dλ.Math.texp, B=∫qB(λ).Math.S(λ)dλ.Math.texp, wherein qR(λ), qG(λ), and qB(λ) are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S(λ) is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and λ designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least one of the parameters R, G, and B. The invention further relates to an image sensor application.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

An arrangement for operating a diode array includes a plurality of LEDs. Each LED is assigned a respective sensor element which is configured to detect a characteristic value representative of a luminous flux of the respective LED. The arrangement also includes a respective supply input for providing a current for light-emitting operation of the respective LED. The arrangement further includes in each case a control unit which is coupled on the input side to the respective supply input and the respective sensor element and on the output side to the respective LED and is configured to control the current for light-emitting operation of the respective LED as a function of the corresponding characteristic value. The arrangement additionally includes a respective supply input for providing a current for light-emitting operation of the respective LED.