Patent classifications
H01L31/1888
Thin-Film Photovoltaic Cell
A photovoltaic device is provided that comprises a photovoltaic active zone being formed of a stack of thin films comprising a first electrode, an absorber film and a metallic electrode. A collection gate is arranged in contact with the first electrode to reduce its electrical resistance and avoid direct physical or electrical contact with the metallic electrode. The photovoltaic active zone includes a plurality of channels, made in the metallic electrode and the absorber film. The collection gate is separated from the metallic electrode and from the absorber film by a dielectric material.
Oxide sintered body and transparent conductive oxide film
An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.
METHOD OF MANUFACTURE OF A COATED GLAZING
A method of manufacture of a coated glazing includes the following steps in sequence a) providing a transparent glass substrate, b) etching a surface of the substrate with an acidic gas, and c) directly or indirectly coating said surface with at least one layer based on a transparent conductive coating (TCC) and/or at least one layer based on a material with a refractive index of at least 1.75.
ARRAY SUBSTRATE, PREPARATION METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE
Disclosed are an array substrate, a preparation method thereof, a display panel and a display device. The array substrate includes a base substrate, a first thin film transistor, a photosensitive sensor, and a dielectric layer. The first thin film is on the base substrate and includes a gate, a drain, a source and a conductive channel between the drain and the source. The photosensitive sensor has the drain of the first thin film transistor as an electrode of the photosensitive sensor. The dielectric layer covers the conductive channel of the first thin film transistor, where the dielectric layer is a metal oxide film.
Semi-transparent thin-film photovoltaic mono cell
The invention relates to a photovoltaic mono cell that is semi-transparent to light, comprising a plurality of active photovoltaic zones that are separated by transparent zones, said active photovoltaic zones being formed from a stack of thin films arranged on a substrate that is transparent to light, said stack of thin films consisting at least of a transparent electrode, an absorber layer and a metal electrode, said transparent zones being apertures produced at least in the metal electrode and in the absorber layer in order to allow as much light as possible to pass, characterized in that it furthermore comprises an electrically conductive collecting gate arranged either making contact with the front electrode in order to decrease the electrical resistance of the transparent electrode, or making contact with the absorber in order to facilitate collection of the electrical current generated by said mono cell.
Transparent conductive structure and formation thereof
Briefly, in accordance with one embodiment, a transparent conductive structure and method to form such a structure are described. For example, an apparatus may include an optoelectronic device. In such an embodiment, an optoelectronic device may include one or more zinc oxide crystals forming a single contiguous three-dimensional transparent conductive structure. The single contiguous three-dimensional transparent conductive structure may include one or more regions thereof having one or more three dimensional geometrical features in the one or more regions of the single contiguous three-dimensional transparent conductive structure so that the single contiguous three-dimensional transparent conductive structure possesses additional electrical-type and/or optical-type properties. For example, additional electrical-type and/or optical-type properties may include electrical current management and/or light management properties.
METHOD FOR MANUFACTURING SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, AND SOLAR CELL
A method for manufacturing a substrate with a transparent conductive film, includes emitting subnano-to-nanosecond laser light to a transparent conductive film formed on a surface of a substrate to form a laser-induced periodic surface structure having a corrugated shape in at least a part of the transparent conductive film.
METHOD FOR PREPARING A CONDUCTIVE, TRANSPARENT AND FLEXIBLE MEMBRANE
The technique relates to a method for preparing a nanomesh metal membrane 5 transferable on a very wide variety of supports of different types and shapes comprising at least one step of de-alloying 1 a thin layer 6 of a metal alloy deposited on a substrate 7, said method being characterized in that said thin layer 6 has a thickness less than 100 nm, and in that said de-alloying step 1 is carried out by exposing said thin layer 6 to an acid vapor in the gas phase 8, in order to form said nanomesh metal membrane 5.
METHOD OF MANUFACTURE OF A COATED GLAZING
A method of manufacture of a coated glazing includes the following steps in sequence a) providing a transparent glass substrate, b) etching a surface of the substrate with an acidic gas, and c) directly or indirectly coating said surface with at least one layer based on a transparent conductive coating (TCC) and/or at least one layer based on a material with a refractive index of at least 1.75.
Solar cell and method of manufacturing the same
The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconductor layer.