An emitter system assembly includes an emitter providing a light emission, a cavity at least partially surrounding the emitter, an aperture configured for transmitting therethrough at least a portion of the light emission from the emitter, and a lenslet in optical communication with the aperture. The cavity includes reflectors for reflecting the light emission within the cavity and toward the aperture. Further, the cavity, the aperture, and the lenslet are configured to cooperate to produce the light output having optical properties suitable for coupling into a projector. In a further aspect, the optical properties include at least one of a predetermined output direction and a solid angle. In another aspect, the emitter system includes a low-refractive index material, anti-reflective layer, and/or light containment structures around the emitter.

A method for manufacturing a light emitting device can include providing a substrate; forming a first active layer with a first electrical polarity; forming a light emitting region configured to emit light with a target wavelength between 200 nm and 300 nm; forming a second active layer with a second electrical polarity; forming a first electrical contact layer, optionally comprising a first optical reflector; removing a portion of the first electrical contact layer, the second active layer, the light emitting region, and the first active layer to form a plurality of mesas; and forming a second electrical contact layer. Each mesa can include a mesa width smaller than 10 times the target wavelength that confines the emitted light from the light emitting region to fewer than 10 transverse modes, or a mesa width smaller than twice a current spreading length of the light emitting device.

A flip light emitting diode chip and a manufacturing method therefor. Said chip comprises a substrate (10), an N-type semiconductor layer (21), an active layer (22), a P-type semiconductor layer (23), a transparent conductive layer (31), a transparent insulating layer (32), a reflective electrode (41), a connection electrode (42) and DBR layer (51); the N-type semiconductor layer (21), the active layer (22) and the P-type semiconductor layer (23) are sequentially stacked on the substrate (10), and a groove (100) and an isolating groove (200) are provided on the P-type semiconductor layer (23); the transparent conductive layer (31) and the transparent insulating layer (32) are sequentially stacked on the P-type semiconductor layer (23), and a plurality of through holes (300) are provided in the transparent insulating layer (32); the reflective electrode (41) is provided in the plurality of through holes (300) and in contact with the transparent conductive layer (31), and is laid on the transparent insulating layer (32); the connection electrode (42) is provided on the N-type semiconductor layer (21); the DBR layer (51) is laid on surfaces of the groove (100) and the isolating groove (200); the plurality of through holes (300) comprise a plurality of rows of first through holes (310), and the first through holes (310) in the same row have the same distance (d) to the groove (100); and in a direction away from the groove (100), the sum of the cross-sectional areas of the first through holes (310) in each row gradually increases and the light emitting brightness is improved.

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

In an embodiment a radiation emitting semiconductor body includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active region located between the first semiconductor region and the second semiconductor region, wherein the active region comprises InGaAlP, wherein the first conductivity type is n-conductive and the second conductivity type is p-conductive, wherein the active region has a larger band gap in an edge region of the semiconductor body than in a central region of the semiconductor body, and wherein a band gap of the second semiconductor region in the edge region and in the central region is the same.

A light-emitting element includes a first reflection layer, a second reflection layer, a multi-layer light-emitting structure, and a light-transmitting semiconductor layer. The first reflection layer has a first reflectance, and the second reflection layer has a second reflectance greater than the first reflectance. The multi-layer light-emitting structure is between the first reflection layer and the second reflection layer. The light-transmitting semiconductor layer is located on the first reflection layer and has an upper light-extracting surface, and the first reflection layer is closer to the upper light-extracting surface than the second reflection layer. An interval between the upper light-extracting surface and the first reflection layer is equal to or smaller than 5 μm.

A light-emitting element array according to the present technology includes: a light-emitting element group; a first wire; and a second wire. The light-emitting element group includes a plurality of first light-emitting elements and a plurality of second light-emitting elements that are arrayed in a planar manner to form a light-emitting element surface. The first wire extends in a direction parallel to the light-emitting element surface, has a region overlapping with the plurality of first light-emitting elements and a region overlapping with the plurality of second light-emitting elements as viewed from a direction perpendicular to the light-emitting element surface, is electrically connected to the plurality of first light-emitting elements, and is not electrically connected to the plurality of second light-emitting elements. The second wire extends in a direction parallel to the light-emitting element surface, has a region overlapping with the plurality of first light-emitting elements and a region overlapping with the plurality of second light-emitting elements as viewed from a direction perpendicular to the light-emitting element surface, is electrically connected to the plurality of second light-emitting elements, and is not electrically connected to the plurality of first light-emitting elements.

A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material, beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5 × 10.sup.17 cm.sup.-3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.

A photon source comprising:

a quantum dot; and an optical cavity,

the optical cavity comprising: a diffractive Bragg grating “DBG”; and a planar reflection layer,

the DBG comprising a plurality of concentric reflective rings surrounding a central disk and at least one conductive track extending from the central disk across the plurality of concentric rings, the quantum dot being provided within the central disk and the planar reflection layer being provided on one side of the DBG to cause light to be preferentially emitted from the opposing side of the DBG.