A display device is provided. The display device comprises a plurality of pixel electrodes on a first substrate and spaced apart from each other; a plurality of light emitting elements on the plurality of pixel electrodes; and a common electrode layer on the plurality of light emitting elements, wherein the common electrode layer includes a first common electrode layer on the plurality of light emitting elements, and a second common electrode layer between the first common electrode layer and the plurality of light emitting elements, and a lattice constant of the first common electrode layer is larger than a lattice constant of the second common electrode layer.

A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.

Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Various examples are provided related to InGaN-relaxed templates. In one example, a device structure includes a GaN layer; and a semibulk template comprising a plurality of stacked periods on the GaN layer. Each period can include a layer of InGaN and a GaN interlayer disposed on the layer of InGaN, where a thickness of the GaN interlayer of a top period of the stacked periods is greater than a thickness of the GaN interlayer of a bottom period disposed on the GaN layer. In another example, a method includes forming a GaN layer and forming a semibulk template including a plurality of stacked periods on the GaN layer. Each period can include a layer of InGaN and a GaN interlayer disposed on the layer of InGaN, where a thickness of the GaN interlayer of the top period is greater than the GaN interlayer of the bottom period.

A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO.sub.2 or SiON that covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of a first p-side pad opening; a second protective layer made of Al.sub.2O.sub.3 that covers the first protective layer, a side surface of a p-side semiconductor layer, and a side surface of the active layer in a portion different from that of a second p-side pad opening; and a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.

In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, wherein the third sub-layer is adjacent to the light emitting layer. The electrical contact can be coupled to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. The first, second and third sub-layers, and the light emitting layer can each comprise a superlattice. The second layer can comprise a chirped superlattice.

The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.

An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

A nitride semiconductor light-emitting element includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer provided between the active layer and the p-type semiconductor layer. A film thickness of the electron blocking layer is not more than 100 nm. An average value of a hydrogen concentration over the electron blocking layer in a stacking direction of the n-type semiconductor layer, the active layer, the electron blocking layer and the p-type semiconductor layer is not more than 2.0×10.sup.18 atoms/cm.sup.3. A boundary portion between the p-type semiconductor layer and the electron blocking layer includes an n-type impurity.

A light-emitting device is provided. The light-emitting device includes a control part, a light-emitting part, a first electrode, and a second electrode. The control part includes a first semiconductor stack having a two-dimensional gas therein. The light-emitting part includes a second semiconductor stack. The first electrode electrically connects the control part and the light-emitting part. The second electrode electrically connects the control part and the light-emitting part. The control part and the light-emitting part are electrically connected in parallel through the first electrode and the second electrode.