A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

A display device includes a substrate including a display area including pixel areas and a non-display area adjacent to the display area; and a pixel disposed in each of the pixel areas. The pixel includes a sub-electrode, a first conductive line, and a second conductive line on the substrate; a first insulating layer over the sub-electrode and the first and second conductive lines; first to fourth electrodes on the first insulating layer; a second insulating layer over the first and second electrodes to completely overlap the first and second electrodes, the second insulating layer exposing the third and fourth electrodes; light emitting elements between the first and second electrodes; a first contact electrode on the first electrode; and a second contact electrode on the second electrode.

A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode.

A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are asymmetric in relation to each other.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are asymmetric in relation to each other.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are symmetric with respect to each other.

An inorganic light emitting diode is disclosed. The inorganic light emitting diode includes a first semiconductor layer, a second semiconductor layer having a light emitting surface composed of four sides, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode coupled to the first semiconductor layer, and a second electrode coupled to the second semiconductor layer, wherein the light emitting surface has a trapezoid shape in which two opposing sides are symmetric with respect to each other.