A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.

A radiation emitting semiconductor chip may include a first semiconductor layer sequence, a second semiconductor layer sequence arranged on the first semiconductor layer sequence, a first contact structure configured to inject charge carriers into the first semiconductor layer sequence, and a contact layer sequence configured to inject charge carriers into the second semiconductor layer sequence. The first contact structure and the contact layer sequence may be formed without overlapping in lateral directions in plan view. The contact layer sequence may have a sheet resistance, which increases in the direction of the first contact structure.

Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

The present invention provides a display device including a substrate, a wiring electrode disposed on the substrate, and a plurality of semiconductor light emitting devices electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the semiconductor light emitting devices and made of a mixture of conductive particles and an insulating material, and a light transmitting layer formed between the semiconductor light emitting devices. And the anisotropic conductive layer is formed in plurality, and any one of the plurality of anisotropic conductive layers is formed to surround one semiconductor light emitting device or to surround a plurality of semiconductor light emitting devices adjacent to each other.

A display device may include a substrate including pixel areas, and a pixel disposed in each of the pixel area. The pixel may include a transistor and a driving voltage line disposed in the substrate, first and second electrodes spaced apart from each other, a bank pattern disposed on the first and second electrodes, respectively, intermediate layers disposed on the bank pattern, light emitting elements disposed between two adjacent intermediate layers of the intermediate layers, a first contact electrode disposed on one of the two adjacent intermediate layers and electrically connected to an end of each of the light emitting elements, and a second contact electrode disposed on another one of the two adjacent intermediate layers and electrically connected to another end of each of the light emitting elements.

A light-emitting element extending in one direction includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to an other side of the main body and having a width less than that of the main body; and an insulation film around at least a portion of the outer surface of the semiconductor core, wherein the insulation film includes a first insulation film around the first end of the semiconductor core; and a second insulation film around the second end of the semiconductor core, wherein the diameter of an outer surface of the first insulation film is the same as a diameter of an outer surface of the second insulation film.

A display device includes a pixel circuit layer including a plurality of transistors, a first electrode and a second electrode disposed on a same layer on the pixel circuit layer, a light emitting element disposed between the first electrode and the second electrode, and an antenna pattern disposed on the light emitting element.