A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.

First to fourth switches are provided so that conduction states are able to be controlled independently of each other. The first switch, the third switch, and the second switch are electrically connected in series between a first wiring and a third wiring. The fourth switch has a function of controlling a conduction state between the light-emitting element and a fourth wiring. In a first transistor, a gate is electrically connected to a node to which the third switch and the second switch are electrically connected, one of a source and a drain is electrically connected to a second wiring, and the other is electrically connected to the light-emitting element. A capacitor includes first and second electrodes, the first electrode is electrically connected to a node to which the first switch and the third switch are electrically connected, and the second electrode is electrically connected to the light-emitting element.

An electronic device includes a substrate, at least one light-emitting element, at least one first pad and at least one second pad. The light-emitting element is disposed on the substrate and includes a first light-emitting diode, a second light-emitting diode, a conductive layer, an organic layer and an insulation layer. The first light-emitting diode includes a first p-type electrode and a first n-type electrode. The second light-emitting diode includes a second p-type electrode and a second n-type electrode. The first pad and the second pad are respectively disposed on the substrate. The first pad is electrically connected to the first n-type electrode, and the second pad is electrically connected to the second p-type electrode. The conductive layer is electrically connected to the first p-type electrode and the second n-type electrode. One light emitting element only corresponds to one first pad and one second pad.

A light-emitting device includes a light-emitting laminated structure, a first contact electrode, and an insulating layer. The light-emitting laminated structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode is disposed on the first surface and forms an ohmic contact with the light-emitting laminated structure. The insulating layer is disposed on the light-emitting laminated structure and covers the light-emitting laminated structure and the first contact electrode. The first contact electrode includes a first metal material that has a work function not less than 5 eV and that is in contact with the first surface. A method for producing the light-emitting device is also disclosed.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

An image display device according to an embodiment includes a substrate, a first wiring line formed on the substrate along a first direction, a first light-emitting element located on the first wiring line and including a first light-emitting surface, a light-transmitting electrode formed along a second direction intersecting the first direction and located on the first light-emitting surface, a first anisotropic conductive member located on the first wiring line, a first terminal electrically connected to the first wiring line via the first anisotropic conductive member, a second anisotropic conductive member located on the light-transmitting electrode, and a second terminal electrically connected to the light-transmitting electrode via the second anisotropic conductive member. The first light-emitting element includes a first bottom surface in contact with the first wiring line, and the first light-emitting surface is located on a side of the first light-emitting element opposite to the first bottom surface.

A method of manufacturing an optoelectronic device, including the steps of: a) providing an active diode stack comprising a first doped semiconductor layer of a first conductivity type and a second doped semiconductor layer of the first conductivity type, coating the upper surface of the first layer; b) arranging a third semiconductor layer on the upper surface of the active stack; c) after step b), forming at least one MOS transistor inside and on top of the third semiconductor layer; and d) after step b), before or after step c), forming trenches vertically extending from the upper surface of the third layer and emerging into or onto the upper surface of the first layer and delimiting a plurality of pixels, each including a diode and an elementary diode control cell.

A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed under the first LED sub-unit, each of the electrode pads being electrically connected to at least one of the first, second, and third LED sub-units, and lead electrodes electrically connected to the electrode pads and extending outwardly from the first LED sub-unit.

A display device includes a display area including first to third areas, first and second signal lines in the display area, pixels connected to the first and second signal lines, a first pad area at one side of the second area, first lines in the second area and connected from the second area to the first pad area, and bridges in the display area and connecting second signal lines in the first area to the first lines. The first area may include first pixel columns including different second signal lines in the first area. The second area may include second pixel columns including different second signal lines in the second area and different first lines. Each of the second pixel columns may include a number of the first lines corresponding to a ratio of a number of the first pixel columns to a number of the second pixel columns.

A display device may include: a substrate including a plurality of pixel areas each including an emission area and a non-emission area; and a pixel located in each of the pixel areas. The pixel may include: a light emitting element including a first end and a second end that face each other; a first electrode located on the first end of the light emitting element and electrically connected to the first end; and a second electrode located on the second end of the light emitting element and electrically connected to the second end. The first electrode and the second electrode may include different conductive materials, and have different thicknesses.