In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

According to an embodiment of the disclosure, a display device includes a first electrode and a second electrode that are disposed on a substrate and spaced apart from each other, a light emitting element disposed between the first electrode and the second electrode, and an auxiliary electrode disposed on the substrate and overlapping the light emitting element such that the auxiliary electrode forms an electric field in an area where the light emitting element is disposed.

An optoelectronic device having a substrate and a plurality of sets of light-emitting diodes where each set includes a plurality of light-emitting diodes, a first lower electrode, a second upper electrode, an electronic component of an electronic circuit formed in a first portion of the substrate, on the side of the face of the substrate that does not bear the light-emitting diodes, and a first conductive means formed through the first portion and electrically connecting a first terminal of the electronic component to one amongst the first and second electrodes. The first conductive means of a given set is electrically-insulated from the first conductive means of the other sets.

A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.

A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode.

Provided is an inorganic light emitting device including a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode covered to the first semiconductor layer, a second electrode covered to the second semiconductor layer, an insulating layer covered the first electrode and the second electrode, and including via holes at positions corresponding to the first electrode and the second electrode, and a first conductive member and a second conductive member coupled to the first electrode and the second electrode, respectively, through the via holes, wherein a distance between the first conductive member and the second conductive member is greater than a distance between the first electrode and the second electrode.

A light source includes a plurality of light emitting elements one-dimensionally or two-dimensionally arranged, a plurality of wavelength conversion members, a plurality of first light diffusing members, a light transmitting member, a second light diffusing member, and a light shielding member. Each of the light emitting elements has a light emission surface and an electrode surface. Each of the wavelength conversion members is disposed on the light emission surface of a respective one of the light emitting elements. Each of the first light diffusing members is disposed on a respective one of the wavelength conversion members. The light transmitting member continuously covers the first light diffusing members. The second light diffusing member is disposed on the light transmitting member. The light shielding member covers lateral surfaces of the light emitting elements, lateral surfaces of the wavelength conversion members, and lateral surfaces of the first light diffusing members.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.

A display device according to an embodiment of the present disclosure includes a substrate, and a display element layer provided on a first surface of the substrate and including a plurality of light emitting elements. The display element layer may include a first electrode and a second electrode configured to extend in a first direction and spaced apart from each other in a second direction different from the first direction, and a third electrode configured to extend in the first direction and face the second electrode with the first electrode interposed therebetween. The first electrode includes a first protrusion protruding toward the second electrode, the second electrode includes a second protrusion protruding toward the first electrode, and the first protrusion and the second protrusion are alternately arranged in the first direction. Each of the light emitting elements may be provided between the first protrusion and the second protrusion, and first ends of respective light emitting elements may be aligned toward one of the first electrode and the second electrode.