A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

A micro light emitting diode including a mesa comprising an epitaxial structure and having a top surface with an area less than 10 micrometers by 10 micrometers, less than 1 micrometer by 1 micrometer, or less than 0.5 micrometers by 0.5 micrometers; a dielectric on the top surface; and a via hole in the dielectric that is centered or self aligned on the top surface, e.g., perfectly centered or centered within 0.5% of the center of the top surface. In one or more examples, the micro light emitting diode is plasma damage free. Metallization in the via hole is used to electrically contact the micro light emitting diode.

Disclosed herein are light emitting diode devices having one or more high reflectivity mesa sidewall electrodes and methods of fabricating thereof.

Disclosed herein are light emitting diode devices having one or more high reflectivity wide bonding pad electrodes and methods of fabricating thereof.

A nitride semiconductor light-emitting element includes a first semiconductor layer; an active layer provided on the first semiconductor layer on one side; a second semiconductor layer provided on the active layer on the opposite side to the first semiconductor layer so as to be in contact with the active layer; and a reflective electrode provided on the second semiconductor layer on the opposite side to the active layer so as to be in contact with the second semiconductor layer and reflects light emitted from the active layer. When an optical film thickness of the second semiconductor layer is an optical film thickness L [nm], a central wavelength of the light emitted from the active layer is a wavelength λ [nm], and an arbitrary number between 1 and 2 is a value m, a relationship 0.48 m λ≤L≤0.5 m λ+(−0.05 m+0.3)λ is satisfied.

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.

In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

A semiconductor light emitting device includes: a first semiconductor layer; an active layer disposed on the first semiconductor layer to emit ultraviolet light; a second semiconductor layer disposed on the active layer; a contact electrode disposed on the first semiconductor layer; a first electrode including a plurality of metal layers having a first portion and a second portion adjacent to the first portion; and a second electrode disposed on the second semiconductor layer; a first bump disposed on the first electrode and electrically coupled to the first semiconductor layer by the first electrode; and a second bump disposed on the second electrode and electrically coupled to the second semiconductor layer by the second electrode, wherein the first semiconductor layer is formed of AlGaN and has an energy larger than the ultraviolet wavelength energy generated in the active layer, wherein the first portion of the plurality of metal layers is in contact with the contact electrode and the second portion of the plurality of metal layers is disposed on and in contact with first semiconductor layer, and all of the plurality of metal layers have irregular top surfaces, respectively.

To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.