Provided are a display including a very-small light-emitting diode (LED) and a method of manufacturing the same. The display includes a panel in which a first signal line and a second signal line are disposed in a lattice form, an LED module including an electrode assembly having a first electrode connected to the first signal line and the second signal line and a second electrode connected to a ground, and a plurality of very-small LEDs connected to the first electrode and the second electrode, and two or more switches which connect the first signal line and the second signal line to the first electrode, wherein the second electrode is connected to a common electrode formed on the panel, at least one other LED module is grounded to the common electrode, and the two or more switches selectively provide a current supplied through the first signal line to the first electrode on the basis of a signal of the first signal line and a signal of the second signal line.

Provided are a display including a very-small light-emitting diode (LED) and a method of manufacturing the same. The display includes a panel in which a first signal line and a second signal line are disposed in a lattice form, an LED module including an electrode assembly having a first electrode connected to the first signal line and the second signal line and a second electrode connected to a ground, and a plurality of very-small LEDs connected to the first electrode and the second electrode, and two or more switches which connect the first signal line and the second signal line to the first electrode, wherein the second electrode is connected to a common electrode formed on the panel, at least one other LED module is grounded to the common electrode, and the two or more switches selectively provide a current supplied through the first signal line to the first electrode on the basis of a signal of the first signal line and a signal of the second signal line.

A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. In some embodiments, each LED structure is connected to a pixel driver and a shared P-electrode. The LED structures are bonded together through bonding layers. In some embodiments, reflection layers are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.

A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.

In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

A display device includes a circuit substrate including a first pixel and a second pixel, a first LED chip overlapping a first anode pad and a first cathode pad in the first pixel, and a second LED chip overlapping a second anode pad and a second cathode pad in the second pixel. The first pixel includes a first light transmission region overlapping the first LED chip, and is between the first anode pad and the first cathode pad. The second pixel includes a second light transmission region overlapping the second LED chip, and is between the second anode pad and the second cathode pad. In a plan view of the circuit substrate, a first area (S.sub.1) of the first light transmission region and a second area (S.sub.2) of the second light transmission region have a first ratio that is represented by S.sub.1:S.sub.2=1:0.8 to 1.2.

A display device includes a circuit substrate including a first pixel and a second pixel, a first LED chip overlapping a first anode pad and a first cathode pad in the first pixel, and a second LED chip overlapping a second anode pad and a second cathode pad in the second pixel. The first pixel includes a first light transmission region overlapping the first LED chip, and is between the first anode pad and the first cathode pad. The second pixel includes a second light transmission region overlapping the second LED chip, and is between the second anode pad and the second cathode pad. In a plan view of the circuit substrate, a first area (S.sub.1) of the first light transmission region and a second area (S.sub.2) of the second light transmission region have a first ratio that is represented by S.sub.1:S.sub.2=1:0.8 to 1.2.

A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 10.sup.8/cm.sup.2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.

A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 10.sup.8/cm.sup.2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.