The present embodiment comprises: a plurality of light-emitting units; and a reflector including reflector units having spaces formed to receive the plurality of light-emitting units, respectively. Each of the plurality of light-emitting units includes an LED package mounted on a substrate and a light diffusion layer having a groove portion formed on a surface opposite to the substrate in the LED package, wherein the outer circumference of the light diffusion layer faces the inner surface of a reflector unit. In the reflector, the plurality of reflector units are integrally formed, the spaces expand along a direction extending away from the substrate, and a wall forming each of the spaces surrounds the outer circumference of each of the LED package and the light diffusion layer.

A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.

A light-emitting diode (LED) includes a substrate, a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure, and a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer, in which at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR.

The invention provides a lighting device (10) comprising a light source (100) configured to generate light source light (101) and a light converter element (200), wherein the light converter element (200) comprises a light transmissive matrix (205), wherein the light transmissive matrix (205) comprises: (i) a first luminescent material (210) configured to convert at least part of one or more of (a) the light source light (101) and (b) optionally a second luminescent material light (221) from an optional second luminescent material (220) into a first luminescent material light (211); and (ii) a thermo-responsive liquid crystalline compound (250); wherein the light transmissive matrix (205) is configured in thermal contact with the light source (100), and wherein the lighting device (10) is further configured to provide lighting device light (11) comprising said light source light (101), said first luminescent material light (210) and optionally said second luminescent material light (221), and wherein said light converter element is arranged for changing one or more of the color and color temperature of the lighting device light with the electrical power provided to the light source.

One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a color filter layer. The light conversion layer is disposed on the light-emitting element. The color filter layer covers the sidewalls of the light conversion layer. In addition, the light-emitting unit further includes a protection layer located between the color filter layer and the light conversion layer.

A light-emitting device includes a support; a light-emitting element on or above the support; a first wavelength conversion member on or above the light-emitting element, the first wavelength conversion member having an area larger than that of the light-emitting element in a top view; a first light-transmissive member covering a lower surface of an extension region of the first wavelength conversion member an a lateral surface of the light-emitting element; a first light-reflective member on lateral sides of the first wavelength conversion member and the first light-transmissive member; and a second wavelength conversion member disposed on or above the first wavelength conversion member. A thickness of the second wavelength conversion member above a peripheral portion of the first wavelength conversion member is smaller than a thickness of the second wavelength conversion member above a central portion of the first wavelength conversion member.

A light-emitting device includes light-emitting elements each having a light-extracting surface, light-transmissive members and a covering member, The light-transmissive members each has an upper surface and a lower surface facing the light-extracting surface of at least one of the light-emitting elements. The covering member integrally covers lateral surfaces of the light-emitting elements and lateral surfaces of the light-transmissive members such that a pair of electrodes of the light-emitting elements are exposed from the covering member at a lower surface of the covering member. At a lower surface of the light-emitting device, the light-emitting elements are arranged in a plurality of columns and a plurality of rows, an alignment direction of the electrodes in one of the light-emitting elements is rotated by 90° in a prescribed. direction from an alignment direction of the electrodes in an adjacent one of the light-emitting elements in one of a column direction and a row direction.

A light-emission device includes at least one emission module comprising: a luminescent crystal known as a concentrator crystal with at least six faces which are parallel in pairs, including a first and a second face, known as lateral faces, perpendicular to a direction x and separated by a distance corresponding to a horizontal dimension of the concentrator in the direction x; a first mirror, which is configured such as to cover the first lateral face at least partly, defining a surface area covered by the first mirror, and at least one surface area (SFS1) which is not covered by the first mirror defining an associated output face; a second mirror, which is configured such as to cover at least 95% of the second lateral face; a brightness triggering element, which is designed to generate emission of brightness radiation (L.sub.F) in the luminescent crystal; a ratio R between the non-covered surface area (SFS1) and a surface area (S.sub.L) of the first lateral face being determined such that rays of the brightness radiation are reflected on the first and second mirrors, and are propagated over a mean distance L.sub.moy such that

[00001]$L_p=\frac{1}{\alpha }>L_{\mathrm{moy}}\gg L$

within the luminescent crystal before passing through at least one output face, forming an output beam, where α is a coefficient of loss per unit of length of the concentrator for the brightness radiation.