The present invention relates to a light source device having minimized exposure of an LED package formed on the light source device, and a camera inspection device using same such that erroneous detections during camera inspection can be minimized A camera inspection device according to the present invention comprises: a portable terminal cradle on which a portable terminal equipped with a camera is cradled; a light source device installed to be spaced apart from the upper portion of the portable terminal cradle by a predetermined distance and configured to emit light towards the camera; and a controller for controlling the turning on/off of the light source device and imaging operations of the camera so as to perform a light bleeding inspection of the camera mounted on the portable terminal. A light source device according to the present invention comprises: an LED package having multiple LED elements mounted on the upper surface of a printed circuit board; and an LED package cover having multiple coupling holes into which the multiple LED elements mounted on the LED package are inserted, respectively, the LED package cover covering a part of the upper surface of the printed circuit board, which is exposed between the multiple LED elements. The LED package cover having a lusterless surface is used to insert the LED elements mounted on the LED package into the coupling holes and to cover same, thereby preventing light bleeding inspection erroneous detections caused by exposure of elements, wires, or soldering parts on side surfaces of the LED elements. The LED package cover has the same height as that of the LED elements of the LED package, thereby preventing the LED elements from being damaged by exposure to the outside.

A light emitting device includes a substrate, a plurality of first light emitting elements mounted on the substrate, including first LED dies, and emitting light having a first wavelength, and a light guide layer arranged so as to cover the plurality of first light emitting elements, and guiding the light from the plurality of first light emitting elements, wherein when LG1 is a distance between the first LED dies, and θc is a critical angle of the light emitted from the light guide layer to the air, and a thickness T between the upper surfaces of the first light emitting elements and the upper surface of the light guide layer is equal to or longer than T1 indicated by T1=LG1/(2tan θc).

A light emitting device includes a substrate, a plurality of first light emitting elements mounted on the substrate, including first LED dies, and emitting light having a first wavelength, and a light guide layer arranged so as to cover the plurality of first light emitting elements, and guiding the light from the plurality of first light emitting elements, wherein when LG1 is a distance between the first LED dies, and θc is a critical angle of the light emitted from the light guide layer to the air, and a thickness T between the upper surfaces of the first light emitting elements and the upper surface of the light guide layer is equal to or longer than T1 indicated by T1=LG1/(2tan θc).

An optoelectronic device includes a substrate, an optoelectronic semiconductor component being arranged on the substrate and having a light-emitting surface, preferably on the upper side of the optoelectronic semiconductor component, and a cover being arranged on the substrate for covering the optoelectronic semiconductor component, the cover providing a cavity which surrounds the optoelectronic semiconductor component when the cover is arranged on the substrate, the cover having at least one channel which extends along a first direction in the cover from the outside to the cavity, and the first direction being not parallel to the substrate and preferably extending at least approximately perpendicular to the substrate.

An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

A light emitting device including a housing including walls defining a cavity having one side thereof opened, a light emitter to emit light having a peak wavelength in a blue wavelength band and including first and second light emitting chips, a reflective region in the housing to reflect light, and a wavelength conversion layer disposed on the light emitter and including a first wavelength converter and a second wavelength converter to emit light having different peak wavelengths from each other, in which the first wavelength converter has a first excitation peak wavelength and the second wavelength converter has a second excitation peak wavelength, and the second wavelength converter includes a fluoride-based red phosphor represented by A.sub.2MF.sub.6:Mn.sup.4+, where A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn, and M is one of Ti, Si, Zr, Sn, and Ge.

A light emitting device including a housing including walls defining a cavity having one side thereof opened, a light emitter to emit light having a peak wavelength in a blue wavelength band and including first and second light emitting chips, a reflective region in the housing to reflect light, and a wavelength conversion layer disposed on the light emitter and including a first wavelength converter and a second wavelength converter to emit light having different peak wavelengths from each other, in which the first wavelength converter has a first excitation peak wavelength and the second wavelength converter has a second excitation peak wavelength, and the second wavelength converter includes a fluoride-based red phosphor represented by A.sub.2MF.sub.6:Mn.sup.4+, where A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se, and Zn, and M is one of Ti, Si, Zr, Sn, and Ge.

A light-emitting module includes a light guide plate including a first surface, and a second surface opposite to the first surface; a light-emitting device disposed at a second surface side of the light guide plate; a first light-reflective member provided at a periphery of the light-emitting device at the second surface side; and a second light-reflective member provided outward of the first light-reflective member at the second surface. A diffuse reflectance of the first light-reflective member for light emitted by the light-emitting device is greater than a diffuse reflectance of the second light-reflective member for the light emitted by the light-emitting device.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.