A flexible sheet of light-emitting diode (LED) light emitters includes a support substrate having a thermally conductive material. The flexible sheet of LED light emitters also has an LED emitter sheet overlying the support substrate, and the LED emitter sheet including a plurality of LED light emitters. The flexible sheet of LED light emitters also has a flexible circuit sheet overlying the LED emitter sheet, and a phosphor sheet overlying the flexible circuit sheet. The phosphor sheet includes a wave-length converting material. The flexible sheet of LED light emitters also has a lens sheet overlying the phosphor sheet. The lens sheet includes a plurality of lenses.

A wiring board according to one embodiment of the present disclosure includes: partitions each having insulating property; and conductive members that are respectively disposed in at least two adjacent regions among a plurality of regions partitioned by the partitions. Two of the conductive members respectively disposed in the adjacent regions are joined to each other through an opening formed on one of the partitions interposed between the two of the conductive members, to serve as part of a wiring.

A light fixture has a translucent tubular bulb. At least one end cap is located at one end of the translucent tubular bulb. A light engine is disposed in the translucent tubular bulb. The light engine has a leadframe on which a plurality of semiconductor light elements is arranged. The fixture may include an electronic driver. The electronic driver includes a plurality of electronic components. At least one of the plurality of electronic components is arranged inside the transparent tubular bulb.

A light emitting diode having an improved heat dissipation effect includes a light source unit emitting a light to a front surface and including a light emitting part, a first electrode pad, and a second electrode pad. The light emitting diode further includes a lead frame unit disposed on a rear surface of the light source unit and including first and second lead terminals respectively connected to the first and second electrode pads. The light emitting diode also includes at least one of the first and second lead terminals includes an upper conductive layer, an intermediate conductive layer, and a lower conductive layer which are disposed on different layers and electrically connected to one another.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising a connecting surface; a third bonding pad and a fourth bonding pad on the connecting surface of the carrier; and a conductive connecting layer comprising a current conductive area between the first bonding pad and the third bonding pad and between the second bonding pad and the fourth bonding pad.

Provided herein are electronic devices including arrays of printable light emitting diodes (LEDs) having device geometries and dimensions providing enhanced thermal management and control relative to conventional LED-based lighting systems. The systems and methods described provide large area, transparent, and/or flexible LED arrays useful for a range of applications in microelectronics, including display and lightning technology. Methods are also provided for assembling and using electronic devices including thermally managed arrays of printable light emitting diodes (LEDs).

An LED module includes a resin substrate, a metal layer formed above the resin substrate, a resist layer formed above the metal layer and including a plurality of layers, and an LED chip mounted above the resist layer via an adhesive. The resist layer comprises an epoxy acrylic-based or a silicon-based resin material, and the adhesive is white.

Solid-state lighting devices including light-emitting diodes (LEDs) and LED packages are disclosed. LED packages are provided with improved thermal and/or electrical coupling between LED chips and submounts or lead frames. Various configurations of submounts with via arrangements are disclosed to provide improved coupling between LED chips and submounts. LED chip contacts are disclosed with one or more openings that are registered with vias to provide more uniform mounting. Multiple LED chips may be arranged around a thermally conductive element on a submount, and a via in the submount may be registered with the thermally conductive element. Subassemblies are provided between LED chips and lead frames to improve electrical and thermal coupling. Underfill materials may be arranged between LED chips and lead frames to provide improved mechanical support.

In a method for making a light-emitting device, a plurality of windows (20) on which light source (10) are mounted is prepared, an block (AG1) in which a plurality of packages (30) are connected in an array is prepared, the window (20) is mounted in each package (30) of the block (AG1) to electrically connect a first pad (25) and a second pad (36) corresponding to each other, and the block (AG1) is separated to obtain the plurality of packages (30) on which the corresponding window (20) are mounted.

An optoelectronic semiconductor component having an optoelectronic semiconductor chip for emitting electromagnetic radiation. The optoelectronic semiconductor chip may have a first semiconductor layer, a second semiconductor layer, first and second current spreading layers, electrical connection elements and first connection regions. The first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The first current spreading layer is electrically connected to the first semiconductor layer. The electrical connection elements electrically connect the second semiconductor layer to the second current spreading layer. The first connection regions are connected to the first current spreading layer and extend through the second current spreading layer. An area coverage of the first connection regions in a region between adjacent parts of the second current spreading layer is greater than 20% of the area coverage of the second current spreading layer.