In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

A computer-implemented method executed on a processor for detecting whether a wafer has been tampered during a semiconductor fabrication process, the method including, at a plurality of patterning steps where lithographic patterns are defined and etched or at a plurality of fabrication processing steps, marking, via an identification tool, each die with an unclonable identification in a memory array, inspecting, via an inspection tool, each of the dies, and removing compromised wafers from a wafer pool during the semiconductor fabrication process.

Systems and processes for flexible and/or low volume product manufacture, including cost effective ways to manufacture low volume system level devices. In one aspect, this disclosure enables the manufacture of a plurality of System in Package (SiP) devices. In one aspect, the devices include one or more of an optical and electrical identifier, corresponding to substrates and/or product designs. The identifiers can be used in the assembly of the devices.

An integrated circuit includes an array of devices including a physically unclonable function (PUF) for chip authentication. A logic pattern is stored in the devices. The logic pattern is determined in accordance with processing variations during manufacture of the array. The logic pattern is represented with a first state for one or more devices with contact shorts and a second state with one or more devices without contact shorts.

A method for producing an individualisation area includes providing at least a first level of the electrical tracks. The method includes depositing a dielectric layer and a deformable layer on the interconnection level. The method includes producing, in an area of the deformable layer, recessed patterns, by penetrating an imprint mould into the deformable layer, the production of the patterns being configured so that the patterns have a randomness in the deformable layer, thus forming random patterns. The method includes transferring the random patterns into the dielectric layer to form transferred random patterns therein and exposing the vias located in line with the transferred random patterns. The method includes filling the transferred random patterns with an electrically conductive material so as to form electrical connections between vias. The method includes producing a second level of the electrical tracks on the vias and the electrical connections.

A semiconductor package including: a base layer; a first chip stack and a second chip stack sequentially stacked over the base layer, each of the first and second chip stacks including a plurality of semiconductor chips which are offset stacked to expose chip pads at one side edge thereof, and the chip pads including stack identification pads for identifying the first chip stack and the second chip stack and chip identification pads for identifying the plurality of semiconductor chips in each of the first and second chip stacks; a first inter-chip wire and a second inter-chip wire connecting power-applied ones of the chip identification pads of the plurality of semiconductor chips of the first and second chip stacks; a first stack wire and second stack wire connecting the chip identification pad of a lowermost semiconductor chip of the first and second chip stacks to the base layer.

An optoelectronic component includes at least one optoelectronic semiconductor chip and an electronic first storage medium. The first storage medium electrically stores first component information. The component can be uniquely identified via the first component information. The optoelectronic component also includes a second storage medium which can be read out wirelessly at least in an unmounted state of the component. The second storage medium stores second component information that is representative of the first component information.

A semiconductor device 1a includes: a first external terminal 31 to which a first voltage is to be applied; a second external terminal 32 to which a second voltage is to be applied; a third external terminal 33; first wiring 17 connected to the first external terminal 31; second wiring 18 connected to the second external terminal 32; an internal block circuit 11 connected to the first wiring 17; a first resistor 12 and a transistor 14 serially connected between the first wiring 17 and the second wiring 18; and a second resistor 13 connected between the first wiring 17 and the second wiring 18. The transistor 14 turns on or off based on a test signal fed from the third external terminal 33. This configuration enables product identification using a resistance value, even if a predetermined resistance value cannot be changed.

A physical unclonable functions (PUF) device including a first copper electrode, a second electrode, and a silicon oxide layer positioned directly between the first copper electrode and the second electrode; a method of producing a PUF device; an array comprising a PUF device; and a method of generating a secure key with a plurality of PUF devices.

A semiconductor structure may include one or more metal gates, one or more channels below the one or more metal gates, a gate dielectric layer separating the one or more metal gates from the one or more channels, and a high-k material embedded in the gate dielectric layer. Both the high-k material and the gate dielectric layer may be in direct contact with the one or more channels. The high-k material may provide threshold voltage variation in the one or more metal gates. The high-k material is a first high-k material or a second high-k material. The semiconductor structure may only include the first high-k material embedded in the gate dielectric layer. The semiconductor structure may only include the second high-k material embedded in the gate dielectric layer. The semiconductor structure may include both the first high-k material and the second high-k material embedded in the gate dielectric layer.